CAS IR GRID研究单元&专题: 上海微系统与信息技术研究所
中国科学院上海微系统与信息技术研究所原名中国科学院上海冶金研究所,前身是成立于1928年的国立中央研究院工程研究所,是中国最早的工学研究机构之一。新中国成立后隶属中国科学院,曾命名中国科学院工学实验馆、中国科学院冶金陶瓷研究所。2001年8月,根据科研领域和科技发展目标的调整,更名为中国科学院上海微系统与信息技术研究所(简称上海微系统所)。中国科学院上海微系统与信息技术研究所学科领域为:电子科学与技术、信息与通信工程;学科方向为微小卫星、无线传感网络、未来移动通信、微系统技术、信息功能材料与器件。
http://www.irgrid.ac.cn:8080/handle/1471x/51054
2024-03-29T05:44:16Z
2024-03-29T05:44:16Z
Effect of pH and Abrasive Concentration on Chemical Mechanical Polishing of Ge2Sb2Te5
Zhang, ZF
Liu, WL
song, zt(重点实验室)
http://www.irgrid.ac.cn:8080/handle/1471x/637378
2013-05-15T05:25:55Z
2013-05-10T03:22:36Z
题名: Effect of pH and Abrasive Concentration on Chemical Mechanical Polishing of Ge2Sb2Te5
作者: Zhang, ZF; Liu, WL; song, zt(重点实验室)
2013-05-10T03:22:36Z
Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material
Ren, WC
Liu, B(重点实验室)
song, zt(重点实验室)
Xiang, YH
Wang, ZT
Zhang, BC
Feng, SL(重点实验室)
http://www.irgrid.ac.cn:8080/handle/1471x/637377
2013-05-15T05:25:53Z
2013-05-10T03:22:29Z
题名: Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material
作者: Ren, WC; Liu, B(重点实验室); song, zt(重点实验室); Xiang, YH; Wang, ZT; Zhang, BC; Feng, SL(重点实验室)
2013-05-10T03:22:29Z
Germanium Nitride as a Buffer Layer for Phase Change Memory
Zhang, X
Liu, B(重点实验室)
Peng, C
Rao, F
Zhou, XL
Song, SN
Wang, LY
Cheng, Y
Wu, LC
Yao, DN
song, zt(重点实验室)
Feng, SL(重点实验室)
http://www.irgrid.ac.cn:8080/handle/1471x/637376
2013-05-15T05:25:52Z
2013-05-10T03:22:23Z
题名: Germanium Nitride as a Buffer Layer for Phase Change Memory
作者: Zhang, X; Liu, B(重点实验室); Peng, C; Rao, F; Zhou, XL; Song, SN; Wang, LY; Cheng, Y; Wu, LC; Yao, DN; song, zt(重点实验室); Feng, SL(重点实验室)
2013-05-10T03:22:23Z
Sb Rich Ge2Sb5Te5 Alloy for High-Speed Phase Change Random Access Memory Applications
Zhang, Q
Song, SN(重点实验室)
Xu, F
http://www.irgrid.ac.cn:8080/handle/1471x/637375
2013-05-15T05:25:52Z
2013-05-10T03:22:14Z
题名: Sb Rich Ge2Sb5Te5 Alloy for High-Speed Phase Change Random Access Memory Applications
作者: Zhang, Q; Song, SN(重点实验室); Xu, F
2013-05-10T03:22:14Z
Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application
Zhou, XL
Wu, LC
song, zt(重点实验室)
Rao, F
Zhu, M
Peng, C
Yao, DN
Song, SN
Liu, B(重点实验室)
Feng, SL(重点实验室)
http://www.irgrid.ac.cn:8080/handle/1471x/637374
2013-05-15T05:25:50Z
2013-05-10T03:22:07Z
题名: Carbon-doped Ge2Sb2Te5 phase change material: A candidate for high-density phase change memory application
作者: Zhou, XL; Wu, LC; song, zt(重点实验室); Rao, F; Zhu, M; Peng, C; Yao, DN; Song, SN; Liu, B(重点实验室); Feng, SL(重点实验室)
2013-05-10T03:22:07Z
In situ transmission electron microscopy investigation of Si-x Sb100-x phase-change materials
Yan, N
Cheng, Y
Liu, XQ
song, zt(重点实验室)
Zhang, Z
http://www.irgrid.ac.cn:8080/handle/1471x/637373
2013-05-15T05:25:50Z
2013-05-10T03:21:57Z
题名: In situ transmission electron microscopy investigation of Si-x Sb100-x phase-change materials
作者: Yan, N; Cheng, Y; Liu, XQ; song, zt(重点实验室); Zhang, Z
2013-05-10T03:21:57Z
W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention
Peng, C
Wu, LC
Rao, F
song, zt(重点实验室)
Yang, PX
Song, HJ
Ren, K
Zhou, XL
Zhu, M
Liu, B(重点实验室)
Chu, JH
http://www.irgrid.ac.cn:8080/handle/1471x/637372
2013-05-15T05:25:49Z
2013-05-10T03:21:50Z
题名: W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retention
作者: Peng, C; Wu, LC; Rao, F; song, zt(重点实验室); Yang, PX; Song, HJ; Ren, K; Zhou, XL; Zhu, M; Liu, B(重点实验室); Chu, JH
2013-05-10T03:21:50Z
Superlattice-like electrode for low-power phase-change random access memory
Lu, YG
Song, SN
song, zt(重点实验室)
Wu, LC
He, AD
Gong, YF
Rao, F
Liu, B(重点实验室)
http://www.irgrid.ac.cn:8080/handle/1471x/637371
2013-05-15T05:25:49Z
2013-05-10T03:21:44Z
题名: Superlattice-like electrode for low-power phase-change random access memory
作者: Lu, YG; Song, SN; song, zt(重点实验室); Wu, LC; He, AD; Gong, YF; Rao, F; Liu, B(重点实验室)
2013-05-10T03:21:44Z
Advantages of GeTeN material for phase change memory applications
Peng, C
Wu, LC
song, zt(重点实验室)
Zhou, XL
Zhu, M
Rao, F
Liu, B(重点实验室)
Feng, SL(重点实验室)
http://www.irgrid.ac.cn:8080/handle/1471x/637370
2013-05-15T05:25:48Z
2013-05-10T03:21:32Z
题名: Advantages of GeTeN material for phase change memory applications
作者: Peng, C; Wu, LC; song, zt(重点实验室); Zhou, XL; Zhu, M; Rao, F; Liu, B(重点实验室); Feng, SL(重点实验室)
2013-05-10T03:21:32Z
Investigation on Sb-rich Sb-Se-Te phase-change material for phase change memory application
Wu, LC
Zhu, M
song, zt(重点实验室)
Lv, SL
Zhou, XL
Peng, C
Rao, F
Song, SN
Liu, B(重点实验室)
Feng, SL(重点实验室)
http://www.irgrid.ac.cn:8080/handle/1471x/637369
2013-05-15T05:25:47Z
2013-05-10T03:21:20Z
题名: Investigation on Sb-rich Sb-Se-Te phase-change material for phase change memory application
作者: Wu, LC; Zhu, M; song, zt(重点实验室); Lv, SL; Zhou, XL; Peng, C; Rao, F; Song, SN; Liu, B(重点实验室); Feng, SL(重点实验室)
2013-05-10T03:21:20Z