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Photoluminescence and defect evolution of nano-ZnO thin films at low temperature annealing

文献类型：期刊论文

作者Yang AiLing1; Yang Yun1; Zhang ZhenZhen1; Bao XiChang2; Yang RenQiang2; Li ShunPin1; Sun Liang2
刊名SCIENCE CHINA-TECHNOLOGICAL SCIENCES
出版日期2013
卷号56期号:1页码:25-31
关键词nano-ZnO thin films low temperature annealing PL spectra defects
英文摘要Nano-ZnO thin films composed of nanoparticles with sizes of 10-16 nm on silicon substrates at low temperature were prepared by sol-gel method. By placing the nano-ZnO thin films at room temperature or annealing at 100 degrees C in air for 10 h intermittently, within a total 70 h annealing time, the evolution of PL spectra of the nano-ZnO thin films were studied in detail. As the annealing time increases, the PL peaks shift from violet to blue and green bands. The PL peaks at violet and blue bands decrease with the annealing time, but the PL peaks at green band are opposite. The PL spectra are related to the defects in the nano-ZnO thin films. The PL peaks positioned at 430 nm are mainly related to defects of zinc interstatials (Zn-i), oxygen vacancies and (V-o); the ones at 420 nm to oxygen interstitials (O-i), Zinc vacancies (V-zn), Zn-i; and the ones at 468 nm to V-zn, Zn-i, and charged oxygen interstatials(V-o(+)). The green luminescence is related to O-i, V-o and Zn-i. The evolutions of PL spectra and the defects are also related to the concentrations of Zn in the thin films, the thicknesses of the films and the annealing time. For the films with 0.5 M and 1.0 M Zn concentrations, after 20 h and 30 h annealing in air at 100 degrees C, respectively, either placing them in air at room temperature or continuing anneal in air at 100 degrees C, the PL spectra are stable. Under the low temperature annealing, Zn-i decreases with the annealing time, and O-i increases. Sufficient O-i favors to keep the nano-ZnO thin films stable. This result is important to nano-ZnO thin films as electron transport layers in inverted or tandem organic solar cells.
WOS标题词Science & Technology ; Technology
类目[WOS]Engineering, Multidisciplinary ; Materials Science, Multidisciplinary
研究领域[WOS]Engineering ; Materials Science
关键词[WOS]SENSITIZED SOLAR-CELLS ; CHEMICAL-VAPOR-DEPOSITION ; OPTICAL-PROPERTIES ; LUMINESCENT PROPERTIES ; HYDROTHERMAL METHOD ; FIELD-EMISSION ; GROWTH ; SENSORS ; FABRICATION ; NANOFLOWERS
收录类别SCI
语种英语
WOS记录号WOS:000314375300005
公开日期2015-12-24
源URL[http://ir.qibebt.ac.cn/handle/337004/6030]  
专题青岛生物能源与过程研究所_先进有机功能材料团队
作者单位1.Ocean Univ China, Dept Phys, Qingdao 266100, Peoples R China
2.Chinese Acad Sci, Qingdao Inst Bioenergy & Bioproc Technol, Qingdao 266101, Peoples R China
推荐引用方式
GB/T 7714		 Yang AiLing,Yang Yun,Zhang ZhenZhen,et al. Photoluminescence and defect evolution of nano-ZnO thin films at low temperature annealing[J]. SCIENCE CHINA-TECHNOLOGICAL SCIENCES,2013,56(1):25-31.
APA Yang AiLing.,Yang Yun.,Zhang ZhenZhen.,Bao XiChang.,Yang RenQiang.,...&Sun Liang.(2013).Photoluminescence and defect evolution of nano-ZnO thin films at low temperature annealing.SCIENCE CHINA-TECHNOLOGICAL SCIENCES,56(1),25-31.
MLA Yang AiLing,et al."Photoluminescence and defect evolution of nano-ZnO thin films at low temperature annealing".SCIENCE CHINA-TECHNOLOGICAL SCIENCES 56.1(2013):25-31.

入库方式： OAI收割

来源：青岛生物能源与过程研究所

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