Direct determination of impurities in high purity silicon carbide by inductively coupled plasma optical emission spectrometry using slurry nebulization technique
文献类型：期刊论文
| 作者 | Wang, Zheng; Qiu, Deren; Ni, Zheming; Tao, Guangyi; Yang, Pengyuan |
| 刊名 | ANALYTICA CHIMICA ACTA
 |
| 出版日期 | 2006 |
| 卷号 | 577期号:2页码:288-294 |
| 关键词 | silicon carbide slurry introduction inductively coupled plasma optical emission spectrometry polyethylene imine |
| 英文摘要 | A novel method for the determination of Al, Ca, Cr, Cu, Fe, Mg, Mn, Ni and Ti in high purity silicon carbide (SiC) using slurry introduction axial viewed inductively coupled plasma optical emission spectrometry (ICP-OES) was described. The various sizes of SiC slurry were dispersed by adding dispersant polyethylene imine (PEI). The stability of slurry was characterized by zeta potential measurement, SEM observation and signal stability testing. The optimal concentration of PEI was found to be 0.5 wt% for the SiC slurry. Analytical results of sub-mu m size SiC by the slurry introduction were in good accordance with those by the alkaline fusion method which verified that determination could be calibrated by aqueous standards. For mu m size SiC, results of most elements have a negative deviation and should be calibrated by the Certified Reference Material slurry. Owing to a rather low contamination in the sample preparation and stability of the slurry, the limits of detection (LODs), which are in the range of 40-2000 ng g(-1), superior to those of the conventional nebulization technique by ICP-OES or ICP-MS. (c) 2006 Elsevier B.V. All rights reserved. |
| WOS记录号 | WOS:000240569500021 |
| 源URL | [http://ir.rcees.ac.cn/handle/311016/22866]  |
| 专题 | 生态环境研究中心_环境化学与生态毒理学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Wang, Zheng,Qiu, Deren,Ni, Zheming,et al. Direct determination of impurities in high purity silicon carbide by inductively coupled plasma optical emission spectrometry using slurry nebulization technique[J]. ANALYTICA CHIMICA ACTA,2006,577(2):288-294. |
| APA | Wang, Zheng,Qiu, Deren,Ni, Zheming,Tao, Guangyi,&Yang, Pengyuan.(2006).Direct determination of impurities in high purity silicon carbide by inductively coupled plasma optical emission spectrometry using slurry nebulization technique.ANALYTICA CHIMICA ACTA,577(2),288-294. |
| MLA | Wang, Zheng,et al."Direct determination of impurities in high purity silicon carbide by inductively coupled plasma optical emission spectrometry using slurry nebulization technique".ANALYTICA CHIMICA ACTA 577.2(2006):288-294. |
入库方式： OAI收割
来源：生态环境研究中心
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