Argon ion beam assisted magnetron sputtering deposition of boron-doped a-Si:H thin films with improved conductivity
文献类型：期刊论文
| 作者 | Wang LQ(王凌倩)1,4 ; Wang, Weiyan2; Huang, Junjun2; Zeng, Yuheng2; Tan, Ruiqin3; Song, Weijie2; Chen JM(陈建敏)1; Chen JM(陈建敏)
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| 刊名 | Journal of Non-Crystalline Solids
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| 出版日期 | 2013 |
| 卷号 | 378页码:177-180 |
| 关键词 | Argon ion beam assisted magnetron sputtering Boron-doped a-Si:H thin film Dark conductivity |
| ISSN号 | 0022-3093 |
| 通讯作者 | 陈建敏 |
| 英文摘要 | Boron-doped a-Si:H thin films were deposited by ion beam assisted magnetron sputtering under different assisted argon ion beam energies, and the changes of structural and electrical properties of the thin films were investigated using Raman spectroscopy, spectroscopic ellipsometry and semiconductor parameter measurement system. It was observed that the short-range order of boron-doped a-Si:H thin films decreased slightly and the defect density of thin films increased with increasing assisted argon ion beam energy. The dark conductivity of boron-doped a-Si:H thin films improved significantly with increasing assisted argon ion beam energy. The conductivity of the boron-doped a-Si:H thin films with 500 eV argon ion beam bombardment was 2.1 x 10-7 S.cm-1, which was about three orders of magnitude higher than that of the thin films deposited without assisted ion beam. The significant change in conductivity of the boron-doped a-Si:H thin films deposited with assisted argon ion beam was mainly ascribed to the activation of threefold coordinated boron atoms. |
| 学科主题 | 材料科学与物理化学 |
| 收录类别 | SCI |
| 资助信息 | the Zhejiang Provincial Natural Science Foundation of China (grant no. LY12E02009);the Ningbo Natural Science Foundation of China (grant no. 2012A610120) |
| 语种 | 英语 |
| WOS记录号 | WOS:000327279800028 |
| 源URL | [http://210.77.64.217/handle/362003/18239]  |
| 专题 | 兰州化学物理研究所_先进润滑与防护材料研究发展中心 兰州化学物理研究所_固体润滑国家重点实验室 |
| 通讯作者 | Chen JM(陈建敏) |
| 作者单位 | 1.Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China 3.Ningbo Univ, Fac Informat Sci & Engn, Ningbo 315211, Zhejiang, Peoples R China 4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang LQ,Wang, Weiyan,Huang, Junjun,et al. Argon ion beam assisted magnetron sputtering deposition of boron-doped a-Si:H thin films with improved conductivity[J]. Journal of Non-Crystalline Solids,2013,378:177-180. |
| APA | Wang LQ.,Wang, Weiyan.,Huang, Junjun.,Zeng, Yuheng.,Tan, Ruiqin.,...&陈建敏.(2013).Argon ion beam assisted magnetron sputtering deposition of boron-doped a-Si:H thin films with improved conductivity.Journal of Non-Crystalline Solids,378,177-180. |
| MLA | Wang LQ,et al."Argon ion beam assisted magnetron sputtering deposition of boron-doped a-Si:H thin films with improved conductivity".Journal of Non-Crystalline Solids 378(2013):177-180. |
入库方式： OAI收割
来源：兰州化学物理研究所
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