Structure disorder degree of polysilicon thin films grown by different processing: Constant C from Raman spectroscopy
文献类型：期刊论文
| 作者 | Wang, Quan1,2; Zhang, Yanmin1; Hu, Ran1; Ge, Daohan1,3; Ren, Naifei1 |
| 刊名 | Journal of Applied Physics
 |
| 出版日期 | 2013 |
| 卷号 | 114期号:18 |
| ISSN号 | 0021-8979 |
| 英文摘要 | Flat, low-stress, boron-doped polysilicon thin films were prepared on single crystalline silicon substrates by low pressure chemical vapor deposition. It was found that the polysilicon films with different deposition processing have different microstructure properties. The confinement effect, tensile stresses, defects, and the Fano effect all have a great influence on the line shape of Raman scattering peak. But the effect results are different. The microstructure and the surface layer are two important mechanisms dominating the internal stress in three types of polysilicon thin films. For low-stress polysilicon thin film, the tensile stresses are mainly due to the change of microstructure after thermal annealing. But the tensile stresses in flat polysilicon thin film are induced by the silicon carbide layer at surface. After the thin film doped with boron atoms, the phenomenon of the tensile stresses increasing can be explained by the change of microstructure and the increase in the content of silicon carbide. We also investigated the disorder degree states for three polysilicon thin films by analyzing a constant C. It was found that the disorder degree of low-stress polysilicon thin film larger than that of flat and boron-doped polysilicon thin films due to the phase transformation after annealing. After the flat polysilicon thin film doped with boron atoms, there is no obvious change in the disorder degree and the disorder degree in some regions even decreases. |
| 学科主题 | 材料科学与物理化学 |
| 收录类别 | SCI |
| 资助信息 | the National Natural Science Foundation of China (No. 51175238);Industrial Supporting Plan of Zhengjiang City (No. GY2013011) |
| 语种 | 英语 |
| WOS记录号 | WOS:000327261800015 |
| 源URL | [http://210.77.64.217/handle/362003/18256]  |
| 专题 | 兰州化学物理研究所_固体润滑国家重点实验室 |
| 作者单位 | 1.Jiangsu Univ, Sch Mech Engn, Zhenjiang 212013, Peoples R China 2.Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China 3.Chinese Acad Sci, State Key Lab Transducer Technol, Shanghai 200050, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Quan,Zhang, Yanmin,Hu, Ran,et al. Structure disorder degree of polysilicon thin films grown by different processing: Constant C from Raman spectroscopy[J]. Journal of Applied Physics,2013,114(18). |
| APA | Wang, Quan,Zhang, Yanmin,Hu, Ran,Ge, Daohan,&Ren, Naifei.(2013).Structure disorder degree of polysilicon thin films grown by different processing: Constant C from Raman spectroscopy.Journal of Applied Physics,114(18). |
| MLA | Wang, Quan,et al."Structure disorder degree of polysilicon thin films grown by different processing: Constant C from Raman spectroscopy".Journal of Applied Physics 114.18(2013). |
入库方式： OAI收割
来源：兰州化学物理研究所
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