中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Exploring the low-friction mechanism of CNx films in inertatmospheres by first-principles calculations

文献类型:期刊论文

作者Cui LC(崔龙辰); Lu ZB(鲁志斌); Wang LP(王立平)
刊名Applied Surface Science
出版日期2015
卷号356页码:1082-1085
关键词CNx films Friction mechanism Lone-pair Dangling bond First-principles calculation
ISSN号0169-4332
通讯作者王立平
英文摘要Amorphous CNx films show low friction coefficients in inert atmospheres, but the mechanism is still not well understood. Here we find that, by first-principles calculations, the dangling bonds on a diamond (1 1 1) surface are replaced with lone-pairs when nitrogen atoms are doped in the 1st or the 2nd top layer, and an ‘electron transfer passivation mechanism’ is identified. Then, two feasible ways for nitrogen atoms to present in the surface layer during the process of wear are suggested. On the basis of the insights gained, we propose a mechanism that highlights the positive role of the nitrogen lone-pairs in the formation of a weak-interacting interface between the friction-induced ‘graphitized’ layer and the intact below part, which is believed to be the reason for the low-frictions of CNx films in inert atmospheres.
学科主题材料科学与物理化学
收录类别SCI
资助信息the National Natural Science Foundation of China (Grant Nos. 51322508;11172300)
语种英语
源URL[http://210.77.64.217/handle/362003/18841]  
专题兰州化学物理研究所_固体润滑国家重点实验室
作者单位State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
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Cui LC,Lu ZB,Wang LP. Exploring the low-friction mechanism of CNx films in inertatmospheres by first-principles calculations[J]. Applied Surface Science,2015,356:1082-1085.
APA Cui LC,Lu ZB,&Wang LP.(2015).Exploring the low-friction mechanism of CNx films in inertatmospheres by first-principles calculations.Applied Surface Science,356,1082-1085.
MLA Cui LC,et al."Exploring the low-friction mechanism of CNx films in inertatmospheres by first-principles calculations".Applied Surface Science 356(2015):1082-1085.

入库方式: OAI收割

来源:兰州化学物理研究所

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