Colossal positive magnetoresistance in surface-passivated oxygen-deficient strontium titanite
文献类型:期刊论文
作者 | David, A; Tian, YF; Yang, P; Gao, XY; Lin, WN; Shah, AB; Zuo, JM; Prellier, W; Wu, T |
刊名 | SCIENTIFIC REPORTS
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出版日期 | 2015 |
卷号 | 5页码:— |
关键词 | 2-DIMENSIONAL ELECTRON-GAS ROOM-TEMPERATURE OXIDE HETEROSTRUCTURES INTERFACE MOBILITY SILICON SRTIO3 |
英文摘要 | Modulation of resistance by an external magnetic field, i.e. magnetoresistance effect, has been a long-lived theme of research due to both fundamental science and device applications. Here we report colossal positive magnetoresistance (CPMR) (>30,000% at a temperature of 2 K and a magnetic field of 9 T) discovered in degenerate semiconducting strontium titanite (SrTiO3) single crystals capped with ultrathin SrTiO3/LaAlO3 bilayers. The low-pressure high-temperature homoepitaxial growth of several unit cells of SrTiO3 introduces oxygen vacancies and high-mobility carriers in the bulk SrTiO3, and the three-unit-cell LaAlO3 capping layer passivates the surface and improves carrier mobility by suppressing surface-defect-related scattering. The coexistence of multiple types of carriers and inhomogeneous transport lead to the emergence of CPMR. This unit-cell-level surface engineering approach is promising to be generalized to others oxides, and to realize devices with high-mobility carriers and interesting magnetoelectronic properties. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2015-12-24 |
源URL | [http://ir.sinap.ac.cn/handle/331007/24414] ![]() |
专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
推荐引用方式 GB/T 7714 | David, A,Tian, YF,Yang, P,et al. Colossal positive magnetoresistance in surface-passivated oxygen-deficient strontium titanite[J]. SCIENTIFIC REPORTS,2015,5:—. |
APA | David, A.,Tian, YF.,Yang, P.,Gao, XY.,Lin, WN.,...&Wu, T.(2015).Colossal positive magnetoresistance in surface-passivated oxygen-deficient strontium titanite.SCIENTIFIC REPORTS,5,—. |
MLA | David, A,et al."Colossal positive magnetoresistance in surface-passivated oxygen-deficient strontium titanite".SCIENTIFIC REPORTS 5(2015):—. |
入库方式: OAI收割
来源:上海应用物理研究所
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