Preparation and characterization of p-type transparent conducting SnO thin films
文献类型：期刊论文
| 作者 | Yang, TY; Zhao, J; Li, XL; Gao, XY; Xue, CF; Wu, YQ; Tai, RZ |
| 刊名 | MATERIALS LETTERS
 |
| 出版日期 | 2015 |
| 卷号 | 139页码:39—41 |
| 关键词 | TIN OXIDE QUARTZ |
| 英文摘要 | P-type transparent conducting SnO thin films with enhanced electronic properties were directly prepared using rf magnetron sputtering without post-deposition annealing. The preparation conditions were systemically investigated. The electronic properties, optical properties, structure and surface morphologies of the films were characterized. It was observed that the structure of the films has a great effect on the films' conductivity. A transparent p-n junction diode was obtained by growing an n-type SnO2:Sb film on a p-type SnO film deposited on a SiO2(1 0 0) substrate. The diode exhibits a distinct I-V rectifying characteristic, indicating that the SnO thin film and the corresponding fabrication method hold promise for use in industrial applications. (C) 2014 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2015-12-24 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/24540]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 推荐引用方式 GB/T 7714 | Yang, TY,Zhao, J,Li, XL,et al. Preparation and characterization of p-type transparent conducting SnO thin films[J]. MATERIALS LETTERS,2015,139:39—41. |
| APA | Yang, TY.,Zhao, J.,Li, XL.,Gao, XY.,Xue, CF.,...&Tai, RZ.(2015).Preparation and characterization of p-type transparent conducting SnO thin films.MATERIALS LETTERS,139,39—41. |
| MLA | Yang, TY,et al."Preparation and characterization of p-type transparent conducting SnO thin films".MATERIALS LETTERS 139(2015):39—41. |
入库方式： OAI收割
来源：上海应用物理研究所
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