Existence of the transverse relaxation time in optically excited bulk semiconductors
文献类型:期刊论文
作者 | Zhang HC ; Lin WZ ; Wang YZ(王育竹) |
刊名 | chin. phys.
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出版日期 | 2006 |
卷号 | 15期号:4页码:735 |
关键词 | ultrafast dephasing carrier-carrier scattering carrier-phonon scattering |
ISSN号 | 1009-1963 |
中文摘要 | two basic types of depolarization mechanisms, carrier-carrier (cc) and carrier-phonon (cp) scattering, are investigated in optically excited bulk semiconductors (3d), in which the existence of the transverse relaxation time is proven based on the vector property of the interband transition matrix elements. the dephasing rates for both cc and cp scattering are determined to be equal to one half of the total scattering-rate-integrals weighted by the factors (1 - cos chi), where chi are the scattering angles. analytical expressions of the polarization dephasing due to cc scattering are established by using an uncertainty broadening approach, and analytical ones due to both the polar optical-phonon and non-polar deformation potential scattering (including inter-valley scattering) are also presented by using the sharp spectral functions in the dephasing rate calculations. these formulas, which reveal the trivial role of the coulomb screening effect in the depolarization processes, are used to explain the experimental results at hand and provide a clear physical picture that is difficult to extract from numerical treatments. |
学科主题 | 光学;量子光学 |
收录类别 | EI |
语种 | 英语 |
WOS记录号 | WOS:000236720900014 |
公开日期 | 2009-09-18 |
源URL | [http://ir.siom.ac.cn/handle/181231/1117] ![]() |
专题 | 上海光学精密机械研究所_量子光学重点实验室 |
推荐引用方式 GB/T 7714 | Zhang HC,Lin WZ,Wang YZ. Existence of the transverse relaxation time in optically excited bulk semiconductors[J]. chin. phys.,2006,15(4):735, 749. |
APA | Zhang HC,Lin WZ,&王育竹.(2006).Existence of the transverse relaxation time in optically excited bulk semiconductors.chin. phys.,15(4),735. |
MLA | Zhang HC,et al."Existence of the transverse relaxation time in optically excited bulk semiconductors".chin. phys. 15.4(2006):735. |
入库方式: OAI收割
来源:上海光学精密机械研究所
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