The origin of the transverse relaxation time in optically excited semiconductor quantum wells
文献类型：期刊论文
| 作者 | Zhang HC ; Lin WZ ; Wang YZ(王育竹) |
| 刊名 | opt. commun.
 |
| 出版日期 | 2005 |
| 卷号 | 245期号:1~6页码:271 |
| 关键词 | semiconductor quantum wells dephasing carrier-carrier scattering |
| ISSN号 | 0030-4018 |
| 中文摘要 | the origin of the transverse relaxation time in optically excited semiconductor quantum wells is investigated based on the vector property of the interband transition matrix elements. the dephasing rate due to carrier-carrier (cc) scattering is found to be equal to half of the common momentum relaxation rate. the analytical expression of the polarization dephasing due to cc scattering in two-dimension is established and the dependence of the dephasing rate gamma(cc) on the carrier density n is determined to be gamma(cc) = constant (.) n-1/2, which is used to explain the experimental results and provides a promising physical picture. (c) 2004 elsevier b.v. all rights reserved. |
| 学科主题 | 光学;量子光学 |
| 收录类别 | EI |
| 语种 | 英语 |
| WOS记录号 | WOS:000226614300030 |
| 公开日期 | 2009-09-18 |
| 源URL | [http://ir.siom.ac.cn/handle/181231/1159]  |
| 专题 | 上海光学精密机械研究所_量子光学重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhang HC,Lin WZ,Wang YZ. The origin of the transverse relaxation time in optically excited semiconductor quantum wells[J]. opt. commun.,2005,245(1~6):271, 280. |
| APA | Zhang HC,Lin WZ,&王育竹.(2005).The origin of the transverse relaxation time in optically excited semiconductor quantum wells.opt. commun.,245(1~6),271. |
| MLA | Zhang HC,et al."The origin of the transverse relaxation time in optically excited semiconductor quantum wells".opt. commun. 245.1~6(2005):271. |
入库方式： OAI收割
来源：上海光学精密机械研究所
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