Electron tunneling through double magnetic barriers on the surface of a topological insulator
文献类型：期刊论文
| ; | |
| 作者 | Wu ZH (Wu Zhenhua); Peeters FM (Peeters F. M.); Chang K (Chang Kai); Wu, ZH, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China |
| 刊名 | physical review b
 ; PHYSICAL REVIEW B
|
| 出版日期 | 2010 ; 2010 |
| 卷号 | 82期号:11页码:art. no. 115211 |
| 关键词 | SINGLE DIRAC CONE Single Dirac Cone Graphene Bi2te3 Phase GRAPHENE BI2TE3 PHASE |
| 通讯作者 | wu, zh, chinese acad sci, inst semicond, sklsm, pob 912, beijing 100083, peoples r china |
| 合作状况 | 国际 |
| 英文摘要 | we study electron tunneling through a planar magnetic and electric barrier on the surface of a three-dimensional topological insulator. for the double barrier structures, we find (i) a directional-dependent tunneling which is sensitive to the magnetic field configuration and the electric gate voltage, (ii) a spin rotation controlled by the magnetic field and the gate voltage, (iii) many fabry-perot resonances in the transmission determined by the distance between the two barriers, and (iv) the electrostatic potential can enhance the difference in the transmission between the two magnetization configurations, and consequently lead to a giant magnetoresistance. points (i), (iii), and (iv) are alike with that in graphene stemming from the same linear-dispersion relations.; We study electron tunneling through a planar magnetic and electric barrier on the surface of a three-dimensional topological insulator. For the double barrier structures, we find (i) a directional-dependent tunneling which is sensitive to the magnetic field configuration and the electric gate voltage, (ii) a spin rotation controlled by the magnetic field and the gate voltage, (iii) many Fabry-Perot resonances in the transmission determined by the distance between the two barriers, and (iv) the electrostatic potential can enhance the difference in the transmission between the two magnetization configurations, and consequently lead to a giant magnetoresistance. Points (i), (iii), and (iv) are alike with that in graphene stemming from the same linear-dispersion relations.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-11-02t00:36:51z no. of bitstreams: 1 electron tunneling through double magnetic barriers on the surface of a topological insulator.pdf: 935179 bytes, checksum: 6afc288a479d35352836d3e58045b85a (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-11-02t02:01:32z (gmt) no. of bitstreams: 1 electron tunneling through double magnetic barriers on the surface of a topological insulator.pdf: 935179 bytes, checksum: 6afc288a479d35352836d3e58045b85a (md5); made available in dspace on 2010-11-02t02:01:32z (gmt). no. of bitstreams: 1 electron tunneling through double magnetic barriers on the surface of a topological insulator.pdf: 935179 bytes, checksum: 6afc288a479d35352836d3e58045b85a (md5) previous issue date: 2010; this work was supported by the nsf of china, the flemish science foundation (fwo-vl), and the belgian science policy.; 国际 |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 资助信息 | this work was supported by the nsf of china, the flemish science foundation (fwo-vl), and the belgian science policy. |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 资助机构 | This work was supported by the NSF of China, the Flemish Science Foundation (FWO-Vl), and the Belgian Science Policy. |
| 公开日期 | 2010-11-02 ; 2010-11-02 ; 2011-04-28 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13901]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 通讯作者 | Wu, ZH, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wu ZH ,Peeters FM ,Chang K ,et al. Electron tunneling through double magnetic barriers on the surface of a topological insulator, Electron tunneling through double magnetic barriers on the surface of a topological insulator[J]. physical review b, PHYSICAL REVIEW B,2010, 2010,82, 82(11):art. no. 115211, Art. No. 115211. |
| APA | Wu ZH ,Peeters FM ,Chang K ,&Wu, ZH, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China.(2010).Electron tunneling through double magnetic barriers on the surface of a topological insulator.physical review b,82(11),art. no. 115211. |
| MLA | Wu ZH ,et al."Electron tunneling through double magnetic barriers on the surface of a topological insulator".physical review b 82.11(2010):art. no. 115211. |
入库方式： OAI收割
来源：半导体研究所
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