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First principles study of N-N split interstitial in GaN nanowires

文献类型：期刊论文

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作者Wang ZG (Wang Zhiguo); Li JB (Li Jingbo); Wang, ZG, Univ Elect Sci&Technol China, DeptApplPhys, Chengdu 610054, Peoples R China. 电子邮箱地址: zgwang@uestc.edu.cn
刊名physics letters a ; PHYSICS LETTERS A
出版日期2010 ; 2010
卷号374期号:44页码:4543-4547
关键词N-N split interstitials N-n Split Interstitials Gan Nanowires First Principles Calculation Semiconductors Energy GaN nanowires First principles calculation SEMICONDUCTORS ENERGY
通讯作者wang, zg, univ elect sci&technol china, deptapplphys, chengdu 610054, peoples r china. 电子邮箱地址: zgwang@uestc.edu.cn
合作状况国内
英文摘要atomic and electronic properties of n-n split interstitial in gan nanowires have been investigated using first principles calculations. the formation energy calculations show that the n-n interstitial favors substituting an n atom at the surface of the nanowires. the interstitial induces localized states in the band gap of gan nanowires.; Atomic and electronic properties of N-N split interstitial in GaN nanowires have been investigated using first principles calculations. The formation energy calculations show that the N-N interstitial favors substituting an N atom at the surface of the nanowires. The interstitial induces localized states in the band gap of GaN nanowires.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-11-14t14:20:01z no. of bitstreams: 1 first principles study of n-n split interstitial in gan nanowires.pdf: 741003 bytes, checksum: 513544a5299a52c4d1d04995ec67b916 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-11-14t14:27:02z (gmt) no. of bitstreams: 1 first principles study of n-n split interstitial in gan nanowires.pdf: 741003 bytes, checksum: 513544a5299a52c4d1d04995ec67b916 (md5); made available in dspace on 2010-11-14t14:27:02z (gmt). no. of bitstreams: 1 first principles study of n-n split interstitial in gan nanowires.pdf: 741003 bytes, checksum: 513544a5299a52c4d1d04995ec67b916 (md5) previous issue date: 2010; z. wang was financially supported by the national natural science foundation of china (10704014) and the young scientists foundation of sichuan (09zq026-029) and uestc (jx0731). j. li gratefully acknowledges financial support from the "one-hundred talents plan" of the chinese academy of sciences and national science fund for distinguished young scholar.; 国内
学科主题半导体物理 ; 半导体物理
收录类别SCI
资助信息z. wang was financially supported by the national natural science foundation of china (10704014) and the young scientists foundation of sichuan (09zq026-029) and uestc (jx0731). j. li gratefully acknowledges financial support from the "one-hundred talents plan" of the chinese academy of sciences and national science fund for distinguished young scholar.
语种英语 ; 英语
资助机构Z. Wang was financially supported by the National Natural Science Foundation of China (10704014) and the Young Scientists Foundation of Sichuan (09ZQ026-029) and UESTC (JX0731). J. Li gratefully acknowledges financial support from the "One-Hundred Talents Plan" of the Chinese Academy of Sciences and National Science Fund for Distinguished Young Scholar.
公开日期2010-11-14 ; 2010-11-14 ; 2011-04-28
源URL[http://ir.semi.ac.cn/handle/172111/13934]  
专题半导体研究所_半导体超晶格国家重点实验室
通讯作者Wang, ZG, Univ Elect Sci&Technol China, DeptApplPhys, Chengdu 610054, Peoples R China. 电子邮箱地址: zgwang@uestc.edu.cn
推荐引用方式
GB/T 7714		 Wang ZG ,Li JB ,Wang, ZG, Univ Elect Sci&Technol China, DeptApplPhys, Chengdu 610054, Peoples R China. 电子邮箱地址: zgwang@uestc.edu.cn. First principles study of N-N split interstitial in GaN nanowires, First principles study of N-N split interstitial in GaN nanowires[J]. physics letters a, PHYSICS LETTERS A,2010, 2010,374, 374(44):4543-4547, 4543-4547.
APA Wang ZG ,Li JB ,&Wang, ZG, Univ Elect Sci&Technol China, DeptApplPhys, Chengdu 610054, Peoples R China. 电子邮箱地址: zgwang@uestc.edu.cn.(2010).First principles study of N-N split interstitial in GaN nanowires.physics letters a,374(44),4543-4547.
MLA Wang ZG ,et al."First principles study of N-N split interstitial in GaN nanowires".physics letters a 374.44(2010):4543-4547.

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来源：半导体研究所

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