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Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires

文献类型：期刊论文

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作者Wang ZG (Wang Zhiguo); Li JB (Li Jingbo); Gao F (Gao Fei); Weber WJ (Weber William J.); Wang, ZG, Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China. 电子邮箱地址: zgwang@uestc.edu.cn
刊名chemphyschem ; CHEMPHYSCHEM
出版日期2010 ; 2010
卷号11期号:15页码:3329-3332
关键词SILICON NANOWIRES Silicon Nanowires Catalytic Growth Band Offsets Solar-cells Semiconductors Superlattices Efficiency CATALYTIC GROWTH BAND OFFSETS SOLAR-CELLS SEMICONDUCTORS SUPERLATTICES EFFICIENCY
通讯作者wang, zg, univ elect sci & technol china, dept appl phys, chengdu 610054, peoples r china. 电子邮箱地址: zgwang@uestc.edu.cn
合作状况国际
英文摘要the electronic properties of wurtzite/zinc-blende (wz/zb) heterojunction gan are investigated using first-principles methods. a small component of zb stacking formed along the growth direction in the wz gan nanowires does not show a significant effect on the electronic property, whereas a charge separation of electrons and holes occurs along the directions perpendicular to the growth direction in the zb stacking. the later case provides an efficient way to separate the charge through controlling crystal structure. these results have significant implications for most state of the art excitonic solar cells and the tuning region in tunable laser diodes.; The electronic properties of wurtzite/zinc-blende (WZ/ZB) heterojunction GaN are investigated using first-principles methods. A small component of ZB stacking formed along the growth direction in the WZ GaN nanowires does not show a significant effect on the electronic property, whereas a charge separation of electrons and holes occurs along the directions perpendicular to the growth direction in the ZB stacking. The later case provides an efficient way to separate the charge through controlling crystal structure. These results have significant implications for most state of the art excitonic solar cells and the tuning region in tunable laser diodes.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-12-05t03:47:54z no. of bitstreams: 1 charge separation in wurtzite-zinc-blende heterojunction gan nanowires.pdf: 310742 bytes, checksum: 0ca5b7dc8b898560d6c1bfe47d1ee3fa (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-12-05t03:59:21z (gmt) no. of bitstreams: 1 charge separation in wurtzite-zinc-blende heterojunction gan nanowires.pdf: 310742 bytes, checksum: 0ca5b7dc8b898560d6c1bfe47d1ee3fa (md5); made available in dspace on 2010-12-05t03:59:21z (gmt). no. of bitstreams: 1 charge separation in wurtzite-zinc-blende heterojunction gan nanowires.pdf: 310742 bytes, checksum: 0ca5b7dc8b898560d6c1bfe47d1ee3fa (md5) previous issue date: 2010; z. wang was financially supported by the national natural science foundation of china (10704014) and the young scientists foundation of sichuan (09zq026-029) and uestc (jx0731). j. li was financially supported by the "one-hundred talents plan" of the chinese academy of sciences and national science fund for distinguished young scholar. f. goo and w j. weber were supported by the division of materials sciences and engineering, office of basic energy sciences, us department of energy under contract de-ac05-76l01830.; 国际
学科主题半导体物理 ; 半导体物理
资助信息z. wang was financially supported by the national natural science foundation of china (10704014) and the young scientists foundation of sichuan (09zq026-029) and uestc (jx0731). j. li was financially supported by the "one-hundred talents plan" of the chinese academy of sciences and national science fund for distinguished young scholar. f. goo and w j. weber were supported by the division of materials sciences and engineering, office of basic energy sciences, us department of energy under contract de-ac05-76l01830.
收录类别SCI
语种英语 ; 英语
资助机构Z. Wang was financially supported by the National Natural Science Foundation of China (10704014) and the Young Scientists Foundation of Sichuan (09ZQ026-029) and UESTC (JX0731). J. Li was financially supported by the "One-Hundred Talents Plan" of the Chinese Academy of Sciences and National Science Fund for Distinguished Young Scholar. F. Goo and W J. Weber were supported by the Division of Materials Sciences and Engineering, Office of Basic Energy Sciences, US Department of Energy under Contract DE-AC05-76L01830.
公开日期2010-12-05 ; 2010-12-05 ; 2011-04-28
源URL[http://ir.semi.ac.cn/handle/172111/20653]  
专题半导体研究所_半导体超晶格国家重点实验室
通讯作者Wang, ZG, Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China. 电子邮箱地址: zgwang@uestc.edu.cn
推荐引用方式
GB/T 7714		 Wang ZG ,Li JB ,Gao F ,et al. Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires, Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires[J]. chemphyschem, CHEMPHYSCHEM,2010, 2010,11, 11(15):3329-3332, 3329-3332.
APA Wang ZG ,Li JB ,Gao F ,Weber WJ ,&Wang, ZG, Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China. 电子邮箱地址: zgwang@uestc.edu.cn.(2010).Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires.chemphyschem,11(15),3329-3332.
MLA Wang ZG ,et al."Charge Separation in Wurtzite/Zinc-Blende Heterojunction GaN Nanowires".chemphyschem 11.15(2010):3329-3332.

入库方式： OAI收割

来源：半导体研究所

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