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Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers

文献类型：期刊论文

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作者Hao RT (Hao Ruiting); Deng SK (Deng Shukang); Shen LX (Shen Lanxian); Yang PZ (Yang Peizhi); Tu JL (Tu Jielei); Liao H (Liao Hua); Xu YQ (Xu Yingqiang); Niu ZC (Niu Zhichuan); Hao, RT, Yunnan Normal Univ, Inst Solar Energy, Key Lab Renewable Energy Adv Mat & Mfg Technol, Educ Minist, Kunming 650092, Yunnan Province, Peoples R China. ruitinghao@semi.ac.cn
刊名thin solid films ; THIN SOLID FILMS
出版日期2010 ; 2010
卷号519期号:1页码:228-230
关键词Gallium Arsenide Gallium Arsenide Gallium Antimonide Gallium Antimonide/aluminum Antimonide Superlattices Molecular Beam Epitaxy Vapor-phase Epitaxy Surface-morphology Growth Superlattices Temperature Relaxation Detectors Gaas(001) Mocvd Films Gallium antimonide Gallium antimonide/Aluminum antimonide Superlattices Molecular Beam Epitaxy VAPOR-PHASE EPITAXY SURFACE-MORPHOLOGY GROWTH SUPERLATTICES TEMPERATURE RELAXATION DETECTORS GAAS(001) MOCVD FILMS
通讯作者hao, rt, yunnan normal univ, inst solar energy, key lab renewable energy adv mat & mfg technol, educ minist, kunming 650092, yunnan province, peoples r china. ruitinghao@semi.ac.cn
合作状况其它
英文摘要gasb films with alsb/gasb compound buffer layers were grown by molecular beam epitaxy on gaas (001) substrates. the crystal quality and optical properties were studied by high resolution transition electron microscopy and low temperature photoluminescence spectra (pl), respectively. it was found that the alsb/gasb compound buffer layers can restrict the dislocations into gasb epilayers. the intensity of pl spectra of gasb layer becomes large with the increasing the periods of alsb/gasb superlattices, indicating that the optical quality of gasb films is improved.; GaSb films with AlSb/GaSb compound buffer layers were grown by molecular beam epitaxy on GaAs (001) substrates. The crystal quality and optical properties were studied by high resolution transition electron microscopy and low temperature photoluminescence spectra (PL), respectively. It was found that the AlSb/GaSb compound buffer layers can restrict the dislocations into GaSb epilayers. The intensity of PL spectra of GaSb layer becomes large with the increasing the periods of AlSb/GaSb superlattices, indicating that the optical quality of GaSb films is improved.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-12-28t00:34:28z no. of bitstreams: 1 molecular beam epitaxy of gasb on gaas substrates with alsb-gasb compound buffer layers.pdf: 810047 bytes, checksum: ae976c06e0fe32c8911387e5b9adae6a (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-12-28t00:59:37z (gmt) no. of bitstreams: 1 molecular beam epitaxy of gasb on gaas substrates with alsb-gasb compound buffer layers.pdf: 810047 bytes, checksum: ae976c06e0fe32c8911387e5b9adae6a (md5); made available in dspace on 2010-12-28t00:59:37z (gmt). no. of bitstreams: 1 molecular beam epitaxy of gasb on gaas substrates with alsb-gasb compound buffer layers.pdf: 810047 bytes, checksum: ae976c06e0fe32c8911387e5b9adae6a (md5) previous issue date: 2010; this work is supported by the national natural science foundation of china (grant nos.: 60607016, 60625405), the national basic research program of china (grant no.: 2007cb936304) and the natural science foundation of yunnan province (grant nos.: 2009cd045 2007e197m).; 其它
学科主题半导体材料 ; 半导体材料
收录类别SCI
资助信息this work is supported by the national natural science foundation of china (grant nos.: 60607016, 60625405), the national basic research program of china (grant no.: 2007cb936304) and the natural science foundation of yunnan province (grant nos.: 2009cd045 2007e197m).
语种英语 ; 英语
资助机构This work is supported by the National Natural Science Foundation of China (Grant Nos.: 60607016, 60625405), the National Basic Research Program of China (Grant No.: 2007CB936304) and the Natural Science Foundation of Yunnan Province (Grant Nos.: 2009CD045 2007E197M).
公开日期2010-12-28 ; 2010-12-28 ; 2011-04-28
源URL[http://ir.semi.ac.cn/handle/172111/20681]  
专题半导体研究所_半导体超晶格国家重点实验室
通讯作者Hao, RT, Yunnan Normal Univ, Inst Solar Energy, Key Lab Renewable Energy Adv Mat & Mfg Technol, Educ Minist, Kunming 650092, Yunnan Province, Peoples R China. ruitinghao@semi.ac.cn
推荐引用方式
GB/T 7714		 Hao RT ,Deng SK ,Shen LX ,et al. Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers, Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers[J]. thin solid films, THIN SOLID FILMS,2010, 2010,519, 519(1):228-230, 228-230.
APA Hao RT .,Deng SK .,Shen LX .,Yang PZ .,Tu JL .,...&Hao, RT, Yunnan Normal Univ, Inst Solar Energy, Key Lab Renewable Energy Adv Mat & Mfg Technol, Educ Minist, Kunming 650092, Yunnan Province, Peoples R China. ruitinghao@semi.ac.cn.(2010).Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers.thin solid films,519(1),228-230.
MLA Hao RT ,et al."Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers".thin solid films 519.1(2010):228-230.

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来源：半导体研究所

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