High-Saturation-Power and High-Speed Ge-on-SOI p-i-n Photodetectors
文献类型：期刊论文
| 作者 | Xue HY (Xue Hai-Yun) ; Xue CL (Xue Chun-Lai) ; Cheng BW (Cheng Bu-Wen) ; Yu YD (Yu Yu-De) ; Wang QM (Wang Qi-Ming) |
| 刊名 | ieee electron device letters
 |
| 出版日期 | 2010 |
| 卷号 | 31期号:7页码:701-703 |
| 关键词 | Germanium photodetectors saturation power silicon-on-insulator (SOI) technology ultrahigh-vacuum chemical vapor deposition (UHV/CVD) |
| 通讯作者 | xue, hy, chinese acad sci, state key lab integrated optoelect, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: xuehy@semi.ac.cn ; cbw@semi.ac.cn |
| 合作状况 | 其它 |
| 英文摘要 | ge-on-silicon-on-insulator p-i-n photodetectors were fabricated using an ultralow-temperature ge buffer by ultrahigh-vacuum chemical vapor deposition. for a detector of 70-mu m diameter, the 1-db small-signal compression power was about 110.5 mw. the 3-db bandwidth at 3-v reverse bias was 13.4 ghz.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-11-01t14:54:50z no. of bitstreams: 1 high-saturation-power and high-speed ge-on-soi p-i-n photodetectors.pdf: 437522 bytes, checksum: 6da59057765aec8d5ea68d98498ccc71 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-11-01t14:56:39z (gmt) no. of bitstreams: 1 high-saturation-power and high-speed ge-on-soi p-i-n photodetectors.pdf: 437522 bytes, checksum: 6da59057765aec8d5ea68d98498ccc71 (md5); made available in dspace on 2010-11-01t14:56:39z (gmt). no. of bitstreams: 1 high-saturation-power and high-speed ge-on-soi p-i-n photodetectors.pdf: 437522 bytes, checksum: 6da59057765aec8d5ea68d98498ccc71 (md5) previous issue date: 2010; this work was supported in part by the major state basic research development program of china under grant 2007cb613404, by the national high-technology research and development program of china under grant 2006aa03z415, and by the national natural science foundation of china under grant 60676005. the review of this letter was arranged by editor c. jagadish; 其它 |
| 学科主题 | 光电子学 |
| 资助信息 | this work was supported in part by the major state basic research development program of china under grant 2007cb613404, by the national high-technology research and development program of china under grant 2006aa03z415, and by the national natural science foundation of china under grant 60676005. the review of this letter was arranged by editor c. jagadish |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-01 ; 2011-04-28 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13900]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Xue HY ,Xue CL ,Cheng BW ,et al. High-Saturation-Power and High-Speed Ge-on-SOI p-i-n Photodetectors[J]. ieee electron device letters,2010,31(7):701-703. |
| APA | Xue HY ,Xue CL ,Cheng BW ,Yu YD ,&Wang QM .(2010).High-Saturation-Power and High-Speed Ge-on-SOI p-i-n Photodetectors.ieee electron device letters,31(7),701-703. |
| MLA | Xue HY ,et al."High-Saturation-Power and High-Speed Ge-on-SOI p-i-n Photodetectors".ieee electron device letters 31.7(2010):701-703. |
入库方式： OAI收割
来源：半导体研究所
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