Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques
文献类型：期刊论文
| 作者 | Guo X (Guo Xi) ; Wang H (Wang Hui) ; Jiang DS (Jiang De-Sheng) ; Wang YT (Wang Yu-Tian) ; Zhao DG (Zhao De-Gang) ; Zhu JJ (Zhu Jian-Jun) ; Liu ZS (Liu Zong-Shun) ; Zhang SM (Zhang Shu-Ming) ; Yang H (Yang Hui) |
| 刊名 | chinese physics b
 |
| 出版日期 | 2010 |
| 卷号 | 19期号:10页码:art. no. 106802 |
| 关键词 | InGaN In-plane grazing incidence x-ray diffraction reciprocal space mapping biaxial strain CRITICAL LAYER THICKNESS OPTICAL-PROPERTIES LATTICE-CONSTANTS GAN HETEROSTRUCTURES ALLOYS WELLS |
| 通讯作者 | guo, x, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: guox@semi.ac.cn |
| 合作状况 | 国内 |
| 英文摘要 | the composition and stain distributions in the ingan epitaxial films are jointly measured by employing various x-ray diffraction (xrd) techniques, including out-of-plane xrd at special planes, in-plane grazing incidence xrd, and reciprocal space mapping (rsm). it is confirmed that the measurement of (204) reflection allows a rapid access to estimate the composition without considering the influence of biaxial strain. the two-dimensional rsm checks composition and degree of strain relaxation jointly, revealing an inhomogeneous strain distribution profile along the growth direction. as the film thickness increases from 100 nm to 450 nm, the strain status of ingan films gradually transfers from almost fully strained to fully relaxed state and then more in atoms incorporate into the film, while the near-interface region of ingan films remains pseudomorphic to gan.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-11-02t01:05:55z no. of bitstreams: 1 evaluation of both composition and strain distributions in ingan epitaxial film using x-ray diffraction techniques.pdf: 1548285 bytes, checksum: 4c4891fb54362fef359fe83053725111 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-11-02t02:02:12z (gmt) no. of bitstreams: 1 evaluation of both composition and strain distributions in ingan epitaxial film using x-ray diffraction techniques.pdf: 1548285 bytes, checksum: 4c4891fb54362fef359fe83053725111 (md5); made available in dspace on 2010-11-02t02:02:12z (gmt). no. of bitstreams: 1 evaluation of both composition and strain distributions in ingan epitaxial film using x-ray diffraction techniques.pdf: 1548285 bytes, checksum: 4c4891fb54362fef359fe83053725111 (md5) previous issue date: 2010; project supported by the national natural science foundation of china (grant nos. 60506001, 60776047, 60976045, and 60836003), the national basic research programme of china (grant no. 2007cb936700) and the national natural science foundation for distinguished young scholars (grant no. 60925017).; 国内 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | project supported by the national natural science foundation of china (grant nos. 60506001, 60776047, 60976045, and 60836003), the national basic research programme of china (grant no. 2007cb936700) and the national natural science foundation for distinguished young scholars (grant no. 60925017). |
| 语种 | 英语 |
| 公开日期 | 2010-11-02 ; 2011-04-28 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13906]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Guo X ,Wang H ,Jiang DS ,et al. Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques[J]. chinese physics b,2010,19(10):art. no. 106802. |
| APA | Guo X .,Wang H .,Jiang DS .,Wang YT .,Zhao DG .,...&Yang H .(2010).Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques.chinese physics b,19(10),art. no. 106802. |
| MLA | Guo X ,et al."Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques".chinese physics b 19.10(2010):art. no. 106802. |
入库方式： OAI收割
来源：半导体研究所
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