The fabrication of GaN-based nanopillar light-emitting diodes
文献类型：期刊论文
| 作者 | Zhu JH (Zhu Jihong) ; Wang LJ (Wang Liangji) ; Zhang SM (Zhang Shuming) ; Wang H (Wang Hui) ; Zhao DG (Zhao Degang) ; Zhu JJ (Zhu Jianjun) ; Liu ZS (Liu Zongshun) ; Jiang DS (Jiang Desheng) ; Yang H (Yang Hui) |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2010 |
| 卷号 | 108期号:7页码:art. no. 074302 |
| 关键词 | MASKS NI |
| 通讯作者 | zhu, jh, chinese acadsci, state key lab integrated optoelect, instsemicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: smzhang@red.semi.ac.cn |
| 合作状况 | 国内 |
| 英文摘要 | ingan/gan multiple quantum well-based light-emitting diode (led) nanopillar arrays were fabricated using ni self-assembled nanodots as etching mask. the ni nanodots were fabricated with a density of 6 x 10(8)-1.5 x 10(9) cm(-2) and a dimension of 100-250 nm with varying ni thickness and annealing duration time. then led nanopillar arrays with diameter of approximately 250 nm and height of 700 nm were fabricated by inductively coupled plasma etching. in comparison to the as-grown led sample an enhancement by a factor of four of photoluminescence (pl) intensity is achieved for the nanopillars and a blueshift as well as a decrease in full width at half maximum of the pl peak are also observed. the method of additional chemical etching was used to remove the etching-induced damage. then nano-led devices were further completed using a planarization approach to deposit p-type electrode on the tips of nanopillars. the current-voltage curves of both nanopillars and planar led devices are measured for comparison.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-11-14t13:52:06z no. of bitstreams: 1 the fabrication of gan-based nanopillar light-emitting diodes.pdf: 549115 bytes, checksum: ef4fbfab48f901632f0ced63490b4b59 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-11-14t13:55:08z (gmt) no. of bitstreams: 1 the fabrication of gan-based nanopillar light-emitting diodes.pdf: 549115 bytes, checksum: ef4fbfab48f901632f0ced63490b4b59 (md5); made available in dspace on 2010-11-14t13:55:08z (gmt). no. of bitstreams: 1 the fabrication of gan-based nanopillar light-emitting diodes.pdf: 549115 bytes, checksum: ef4fbfab48f901632f0ced63490b4b59 (md5) previous issue date: 2010; this work is supported by the national natural science foundation of china under grant nos. 60506001, 60776047, 60976045, and 60836003, the national basic research programme of china under grant no. 2007cb936700, and the national science fundation for distinguished young scholars under grant no. 60925017.; 国内 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | this work is supported by the national natural science foundation of china under grant nos. 60506001, 60776047, 60976045, and 60836003, the national basic research programme of china under grant no. 2007cb936700, and the national science fundation for distinguished young scholars under grant no. 60925017. |
| 语种 | 英语 |
| 公开日期 | 2010-11-14 ; 2011-04-28 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13927]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhu JH ,Wang LJ ,Zhang SM ,et al. The fabrication of GaN-based nanopillar light-emitting diodes[J]. journal of applied physics,2010,108(7):art. no. 074302. |
| APA | Zhu JH .,Wang LJ .,Zhang SM .,Wang H .,Zhao DG .,...&Yang H .(2010).The fabrication of GaN-based nanopillar light-emitting diodes.journal of applied physics,108(7),art. no. 074302. |
| MLA | Zhu JH ,et al."The fabrication of GaN-based nanopillar light-emitting diodes".journal of applied physics 108.7(2010):art. no. 074302. |
入库方式： OAI收割
来源：半导体研究所
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