Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours
文献类型：期刊论文
| 作者 | Zeng C (Zeng Chang) ; Zhang SM (Zhang Shu-Ming) ; Ji L (Ji Lian) ; Wang HB (Wang Huai-Bing) ; Zhao DG (Zhao De-Gang) ; Zhu JJ (Zhu Jian-Jun) ; Liu ZS (Liu Zong-Shun) ; Jiang DS (Jiang De-Sheng) ; Cao Q (Cao Qing) ; Chong M (Chong Ming) ; Duan LH (Duan Li-Hong) ; Wang H (Wang Hai) ; Shi YS (Shi Yong-Sheng) ; Liu SY (Liu Su-Ying) ; Yang H (Yang Hui) ; Chen LH (Chen Liang-Hui) |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2010 |
| 卷号 | 27期号:11页码:art. no. 114215 |
| 通讯作者 | zeng, c, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: smzhang@red.semi.ac.cn |
| 合作状况 | 国内 |
| 英文摘要 | we report our recent progress of investigations on ingan-based blue-violet laser diodes (lds). the room-temperature (rt) cw operation lifetime of lds has extended to longer than 15.6 h. the ld structure was grown on a c-plane free-standing (fs) gan substrate by metal organic chemical vapor deposition (mocvd). the typical threshold current and voltage of ld under rt cw operation are 78 ma and 6.8 v, respectively. the experimental analysis of degradation of ld performances suggests that after aging treatment, the increase of series resistance and threshold current can be mainly attributed to the deterioration of p-type ohmic contact and the decrease of internal quantum efficiency of multiple quantum well (mqw), respectively.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-12-05t03:51:58z no. of bitstreams: 1 room-temperature continuous-wave operation of ingan-based blue-violet laser diodes with a lifetime of 15.6 hours.pdf: 822102 bytes, checksum: 7c8c6ba54b30d1b567fb0b5e5a7aa3c4 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-12-05t03:59:30z (gmt) no. of bitstreams: 1 room-temperature continuous-wave operation of ingan-based blue-violet laser diodes with a lifetime of 15.6 hours.pdf: 822102 bytes, checksum: 7c8c6ba54b30d1b567fb0b5e5a7aa3c4 (md5); made available in dspace on 2010-12-05t03:59:30z (gmt). no. of bitstreams: 1 room-temperature continuous-wave operation of ingan-based blue-violet laser diodes with a lifetime of 15.6 hours.pdf: 822102 bytes, checksum: 7c8c6ba54b30d1b567fb0b5e5a7aa3c4 (md5) previous issue date: 2010; supported by the national natural science foundation of china under grant nos 60976045, 60506001, 60776047 and 60836003, and the national basic research program of china under grant no 2007cb936700.; 国内 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | supported by the national natural science foundation of china under grant nos 60976045, 60506001, 60776047 and 60836003, and the national basic research program of china under grant no 2007cb936700. |
| 语种 | 英语 |
| 公开日期 | 2010-12-05 ; 2011-04-28 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/20654]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Zeng C ,Zhang SM ,Ji L ,et al. Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours[J]. chinese physics letters,2010,27(11):art. no. 114215. |
| APA | Zeng C .,Zhang SM .,Ji L .,Wang HB .,Zhao DG .,...&Chen LH .(2010).Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours.chinese physics letters,27(11),art. no. 114215. |
| MLA | Zeng C ,et al."Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours".chinese physics letters 27.11(2010):art. no. 114215. |
入库方式： OAI收割
来源：半导体研究所
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