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Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties
文献类型：期刊论文
| 作者 | Wang H (Wang H.) ; Jiang DS (Jiang D. S.) ; Jahn U (Jahn U.) ; Zhu JJ (Zhu J. J.) ; Zhao DG (Zhao D. G.) ; Liu ZS (Liu Z. S.) ; Zhang SM (Zhang S. M.) ; Qiu YX (Qiu Y. X.) ; Yang H (Yang H.) |
| 刊名 | physica b-condensed matter
 |
| 出版日期 | 2010 |
| 卷号 | 405期号:22页码:4668-4672 |
| 关键词 | InGaN Dislocation Metalorganic chemical vapor deposition High resolution X-ray diffraction Cathodoluminescence MISFIT DISLOCATIONS QUANTUM-WELLS BAND-GAP EPILAYERS GENERATION ALLOYS INN |
| 通讯作者 | wang, h, chinese acad sci, state key lab integrated optoelect, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: wangh@semi.ac.cn |
| 合作状况 | 国内 |
| 英文摘要 | the evolution of strain and structural properties of thick epitaxial ingan layers grown on gan with different thicknesses are investigated. it is found that, with increase in ingan thickness, plastic relaxation via misfit dislocation generation becomes a more important strain relaxation mechanism. accompanied with the relaxation of compressive strain, the in composition of ingan layer increases and induces an apparent red-shift of the cathodoluminescence peak of the ingan layer. on the other hand, the plastic relaxation process results in a high defect density, which degrades the structural and optical properties of ingan layers. a transition layer region with both strain and in composition gradients is found to exist in the 450-nm-thick ingan layer.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-12-12t08:06:11z no. of bitstreams: 1 investigation on the strain relaxation of ingan layer and its effects on the ingan structural and optical properties.pdf: 686746 bytes, checksum: 34fb136f615a0efae93c2b53bc18ac31 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-12-12t08:07:24z (gmt) no. of bitstreams: 1 investigation on the strain relaxation of ingan layer and its effects on the ingan structural and optical properties.pdf: 686746 bytes, checksum: 34fb136f615a0efae93c2b53bc18ac31 (md5); made available in dspace on 2010-12-12t08:07:24z (gmt). no. of bitstreams: 1 investigation on the strain relaxation of ingan layer and its effects on the ingan structural and optical properties.pdf: 686746 bytes, checksum: 34fb136f615a0efae93c2b53bc18ac31 (md5) previous issue date: 2010; this work was supported by the national natural science fund of china (grant nos. 60976045, 60506001, 60836003 and 60776047), national basic research program (2007cb936700) and the national science foundation for distinguished young scholars under grant no. 60925017. the authors would like to thank the beijing synchrotron radiation facility (bsrf) for assistance in thin film characterization.; 国内 |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | this work was supported by the national natural science fund of china (grant nos. 60976045, 60506001, 60836003 and 60776047), national basic research program (2007cb936700) and the national science foundation for distinguished young scholars under grant no. 60925017. the authors would like to thank the beijing synchrotron radiation facility (bsrf) for assistance in thin film characterization. |
| 语种 | 英语 |
| 公开日期 | 2010-12-12 ; 2011-04-28 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/20672]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Wang H ,Jiang DS ,Jahn U ,et al. Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties[J]. physica b-condensed matter,2010,405(22):4668-4672. |
| APA | Wang H .,Jiang DS .,Jahn U .,Zhu JJ .,Zhao DG .,...&Yang H .(2010).Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties.physica b-condensed matter,405(22),4668-4672. |
| MLA | Wang H ,et al."Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties".physica b-condensed matter 405.22(2010):4668-4672. |
入库方式： OAI收割
来源：半导体研究所
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