中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
EFFECT OF IMAGE FORCES ON ELECTRONS CONFINED IN LOW-DIMENSIONAL STRUCTURES UNDER A MAGNETIC-FIELD

文献类型:期刊论文

作者DOSTOV VL ; WANG ZG
刊名semiconductor science and technology
出版日期1994
卷号9期号:10页码:1781-1786
关键词QUANTUM-WELLS DEPOPULATION SYSTEMS
ISSN号0268-1242
通讯作者dostov vl ioffe instpolitekhnicheskaya 26st petersburg 194021russia
中文摘要we consider the effect of image forces, arising due to a difference in dielectric permeabilities of the well layer and barrier layers, on the energy spectrum of an electron confined in a rectangular potential well under a magnetic field. depending on the value and the sign of the dielectric mismatch, image forces can localize electrons near the interfaces of the well or in well centre and change the direct intersubband gaps into indirect ones. these effects can be controlled by variation of the magnetic field, offering possibilities for exact tuning of electronic devices.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-11-15
源URL[http://ir.semi.ac.cn/handle/172111/13955]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
DOSTOV VL,WANG ZG. EFFECT OF IMAGE FORCES ON ELECTRONS CONFINED IN LOW-DIMENSIONAL STRUCTURES UNDER A MAGNETIC-FIELD[J]. semiconductor science and technology,1994,9(10):1781-1786.
APA DOSTOV VL,&WANG ZG.(1994).EFFECT OF IMAGE FORCES ON ELECTRONS CONFINED IN LOW-DIMENSIONAL STRUCTURES UNDER A MAGNETIC-FIELD.semiconductor science and technology,9(10),1781-1786.
MLA DOSTOV VL,et al."EFFECT OF IMAGE FORCES ON ELECTRONS CONFINED IN LOW-DIMENSIONAL STRUCTURES UNDER A MAGNETIC-FIELD".semiconductor science and technology 9.10(1994):1781-1786.

入库方式: OAI收割

来源:半导体研究所

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