EFFECT OF IMAGE FORCES ON ELECTRONS CONFINED IN LOW-DIMENSIONAL STRUCTURES UNDER A MAGNETIC-FIELD
文献类型:期刊论文
作者 | DOSTOV VL ; WANG ZG |
刊名 | semiconductor science and technology
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出版日期 | 1994 |
卷号 | 9期号:10页码:1781-1786 |
关键词 | QUANTUM-WELLS DEPOPULATION SYSTEMS |
ISSN号 | 0268-1242 |
通讯作者 | dostov vl ioffe instpolitekhnicheskaya 26st petersburg 194021russia |
中文摘要 | we consider the effect of image forces, arising due to a difference in dielectric permeabilities of the well layer and barrier layers, on the energy spectrum of an electron confined in a rectangular potential well under a magnetic field. depending on the value and the sign of the dielectric mismatch, image forces can localize electrons near the interfaces of the well or in well centre and change the direct intersubband gaps into indirect ones. these effects can be controlled by variation of the magnetic field, offering possibilities for exact tuning of electronic devices. |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-11-15 |
源URL | [http://ir.semi.ac.cn/handle/172111/13955] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | DOSTOV VL,WANG ZG. EFFECT OF IMAGE FORCES ON ELECTRONS CONFINED IN LOW-DIMENSIONAL STRUCTURES UNDER A MAGNETIC-FIELD[J]. semiconductor science and technology,1994,9(10):1781-1786. |
APA | DOSTOV VL,&WANG ZG.(1994).EFFECT OF IMAGE FORCES ON ELECTRONS CONFINED IN LOW-DIMENSIONAL STRUCTURES UNDER A MAGNETIC-FIELD.semiconductor science and technology,9(10),1781-1786. |
MLA | DOSTOV VL,et al."EFFECT OF IMAGE FORCES ON ELECTRONS CONFINED IN LOW-DIMENSIONAL STRUCTURES UNDER A MAGNETIC-FIELD".semiconductor science and technology 9.10(1994):1781-1786. |
入库方式: OAI收割
来源:半导体研究所
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