Approaching the Hole Mobility Limit of GaSb Nanowires
文献类型：期刊论文
| 作者 | Yang, Zai-xing1,2,3; Yip, Senpo1,2,3; Li, Dapan1,3; Han, Ning4; Dong, Guofa1,3; Liang, Xiaoguang1,3; Shu, Lei1; Hung, Tak Fu1; Mo, Xiaoliang5; Ho, Johnny C.1,2,3 |
| 刊名 | ACS NANO
 |
| 出版日期 | 2015-09-01 |
| 卷号 | 9期号:9页码:9268-9275 |
| 关键词 | GaSb nanowires surfactant-assisted chemical vapor deposition diameter dependent growth orientation hole mobility |
| ISSN号 | 1936-0851 |
| 英文摘要 | In recent years, high-mobility GaSb nanowires have received tremendous attention for high-performance p-type transistors; however, due to the difficulty in achieving thin and uniform nanowires (NWs), there is limited report until now addressing their diameter-dependent properties and their hole mobility limit in this important one-dimensional material system, where all these are essential information for the deployment of GaSb NWs in various applications. Here, by employing the newly developed surfactant-assisted chemical vapor deposition, high-quality and uniform GaSb NWs with controllable diameters, spanning from 16 to 70 nm, are successfully prepared, enabling the direct assessment of their growth orientation and hole mobility as a function of diameter while elucidating the role of sulfur surfactant and the interplay between surface and interface energies of NWs on their electrical properties. The sulfur passivation is found to efficiently stabilize the high-energy NW sidewalls of (111) and (311) in order to yield the thin NWs (i.e., <40 nm in diameters) with the dominant growth orientations of < 211 > and < 110 >, whereas the thick NWs (i.e., >40 nm in diameters) would grow along the most energy-favorable close-packed planes with the orientation of < 111 >, supported by the approximate atomic models. Importantly, through the reliable control of sulfur passivation, growth orientation and surface roughness, GaSb NWs with the peak hole mobility of similar to 400 cm(2)Vs(-1) for the diameter of 48 nm, approaching the theoretical limit under the hole concentration of similar to 2.2 x 10(18) cm(-3), can be achieved for the first time. All these indicate their promising potency for utilizations in different technological domains. |
| WOS标题词 | Science & Technology ; Physical Sciences ; Technology |
| 类目[WOS] | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| 研究领域[WOS] | Chemistry ; Science & Technology - Other Topics ; Materials Science |
| 关键词[WOS] | FIELD-EFFECT-TRANSISTORS ; ELECTRONIC TRANSPORT-PROPERTIES ; NEAR-INFRARED PHOTODETECTORS ; DEPENDENT GROWTH DIRECTION ; III-V ; INAS NANOWIRES ; SILICON NANOWIRES ; GAAS NANOWIRES ; HETEROSTRUCTURE NANOWIRES ; VAPOR-DEPOSITION |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000361935800066 |
| 源URL | [http://ir.ipe.ac.cn/handle/122111/19619]  |
| 专题 | 过程工程研究所_多相复杂系统国家重点实验室 |
| 作者单位 | 1.City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon 999077, Hong Kong, Peoples R China 2.City Univ Hong Kong, State Key Lab Millimeter Waves, Kowloon 999077, Hong Kong, Peoples R China 3.City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 518057, Peoples R China 4.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China 5.Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, Zai-xing,Yip, Senpo,Li, Dapan,et al. Approaching the Hole Mobility Limit of GaSb Nanowires[J]. ACS NANO,2015,9(9):9268-9275. |
| APA | Yang, Zai-xing.,Yip, Senpo.,Li, Dapan.,Han, Ning.,Dong, Guofa.,...&Ho, Johnny C..(2015).Approaching the Hole Mobility Limit of GaSb Nanowires.ACS NANO,9(9),9268-9275. |
| MLA | Yang, Zai-xing,et al."Approaching the Hole Mobility Limit of GaSb Nanowires".ACS NANO 9.9(2015):9268-9275. |
入库方式： OAI收割
来源：过程工程研究所
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