PRESSURE-DEPENDENCE OF PHOTOLUMINESCENCE IN IN(X)GA(1-X)AS/AL(Y)GA(1-Y)AS STRAINED QUANTUM-WELLS WITH DIFFERENT WIDTH
文献类型：期刊论文
| 作者 | LIU ZX ; LI GH ; HAN HX ; WANG ZP |
| 刊名 | solid-state electronics
 |
| 出版日期 | 1994 |
| 卷号 | 37期号:0页码:885-888 |
| ISSN号 | 0038-1101 |
| 通讯作者 | liu zx chinese acad sciinst semicondnatl lab superlattices & microstructpob 912beijing 100083peoples r china |
| 中文摘要 | a systematic investigation on the photoluminescence (pl) properties of inxga1-xas/alyga1-xas (x = 0.15, y = 0, 0.33) strained quantum wells (sqws) with well widths from 1.7 to 11.0 nm has been performed at 77 k under high pressure up to 40 kbar. the experimental results show that the pressure coefficients of the exciton peaks corresponding to transitions from the first conduction subband to the heavy-hole subband increase from 10.05 mev/kbar of 11.0 nm well to 10.62 mev/kbar of 1.8 nm well for in0.15ga0.85as/gaas sqws. however, the corresponding pressure coefficients slightly decrease from 9.93 mev/kbar of 9.0 nm well to 9.73 mev/kbar of 1.7 nm well for in0.15ga0.85as/al0.33ga0.67as sqws. calculations based on the kronig-penney model reveal that the increased or decreased barrier heights and the increased effective masses with pressure are the main reasons of the change in the pressure coefficients. |
| 学科主题 | 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13963]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | LIU ZX,LI GH,HAN HX,et al. PRESSURE-DEPENDENCE OF PHOTOLUMINESCENCE IN IN(X)GA(1-X)AS/AL(Y)GA(1-Y)AS STRAINED QUANTUM-WELLS WITH DIFFERENT WIDTH[J]. solid-state electronics,1994,37(0):885-888. |
| APA | LIU ZX,LI GH,HAN HX,&WANG ZP.(1994).PRESSURE-DEPENDENCE OF PHOTOLUMINESCENCE IN IN(X)GA(1-X)AS/AL(Y)GA(1-Y)AS STRAINED QUANTUM-WELLS WITH DIFFERENT WIDTH.solid-state electronics,37(0),885-888. |
| MLA | LIU ZX,et al."PRESSURE-DEPENDENCE OF PHOTOLUMINESCENCE IN IN(X)GA(1-X)AS/AL(Y)GA(1-Y)AS STRAINED QUANTUM-WELLS WITH DIFFERENT WIDTH".solid-state electronics 37.0(1994):885-888. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。