BAND-STRUCTURE OF MG1-XZNXSYSE1-Y
文献类型：期刊论文
| 作者 | TEO KL ; FENG YP ; LI MF ; CHONG TC ; XIA JB |
| 刊名 | semiconductor science and technology
 |
| 出版日期 | 1994 |
| 卷号 | 9期号:4页码:349-355 |
| 关键词 | QUANTUM-WELL STRUCTURES MOLECULAR-BEAM EPITAXY ELECTRON CORRELATION GAAS SUBSTRATE SEMICONDUCTORS ZNSE ZNMGSSE GROWTH MASSES GAP |
| ISSN号 | 0268-1242 |
| 通讯作者 | teo kl natl univ singaporedept elect engnctr optoelectrsingapore 0511singapore |
| 中文摘要 | the empirical pseudopotential method within the virtual crystal approximation is used to calculate the band structure of mg1-xznysyse1-y, which has recently been proved to be a potential semiconductor material for optoelectronic device applications in the blue spectral region. it is shown that mgznsse can be a direct or an indirect semiconductor depending on the alloy composition. electron and hole effective masses are calculated for different compositions. polynomial approximations are obtained for both the energy gap and the effective mass as functions of alloy composition at the gamma valley. this information will be useful for the future design of blue wavelength optoelectronic devices as well as for assessment of their properties. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13967]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | TEO KL,FENG YP,LI MF,et al. BAND-STRUCTURE OF MG1-XZNXSYSE1-Y[J]. semiconductor science and technology,1994,9(4):349-355. |
| APA | TEO KL,FENG YP,LI MF,CHONG TC,&XIA JB.(1994).BAND-STRUCTURE OF MG1-XZNXSYSE1-Y.semiconductor science and technology,9(4),349-355. |
| MLA | TEO KL,et al."BAND-STRUCTURE OF MG1-XZNXSYSE1-Y".semiconductor science and technology 9.4(1994):349-355. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。