THEORETICAL INVESTIGATION OF THE DYNAMIC PROCESS OF THE ILLUMINATION OF GAAS
文献类型：期刊论文
| 作者 | REN GB ; WANG ZG ; XU B ; BING Z |
| 刊名 | physical review b
 |
| 出版日期 | 1994 |
| 卷号 | 50期号:8页码:5189-5195 |
| 关键词 | SPIN-RESONANCE SIGNAL ASGA ANTISITE DEFECT METASTABLE EL2 GROWN GAAS PHOTOCONDUCTIVITY PHOTORESPONSE PHOTOCURRENT SPECTRUM RECOVERY |
| ISSN号 | 0163-1829 |
| 通讯作者 | ren gb china ctr adv sci & technolworld labpob 8730beijing 100080peoples r china |
| 中文摘要 | the dynamic process of light illumination of gaas is studied numerically in this paper to understand the photoquenching characteristics of the material. this peculiar behavior of gaas is usally ascribed to the existence of el2 states and their photodriven metastable states. to understand the conductivity quenching, we have introduced nonlinear terms describing the recombination of the nonequilibrium free electrons and holes into the calculation. though some photoquenching such as photocapacitance, infrared absorption, and electron-paramagnetic-resonance quenching can be explained qualitatively by only considering the internal transfer between the el2 state and its metastability, it is essential to take the recombination into consideration for a clear understanding of the photoquenching process. the numerical results and approximate analytical approach are presented in this paper for the first time to our knowledge. the calculation gives quite a reasonable explanation for n-type semiconducting gaas to have infrared absorption quenching while lacking photoconductance quenching. also, the calculation results have allowed us to interpret the enhanced photoconductance phenomenon following the conductance quenching in typical semi-insulating gaas and have shown the expected thermal recovery temperature of about 120 k. the numerical results are in agreement with the reported experiments and have diminished some ambiguities in previous works. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13969]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | REN GB,WANG ZG,XU B,et al. THEORETICAL INVESTIGATION OF THE DYNAMIC PROCESS OF THE ILLUMINATION OF GAAS[J]. physical review b,1994,50(8):5189-5195. |
| APA | REN GB,WANG ZG,XU B,&BING Z.(1994).THEORETICAL INVESTIGATION OF THE DYNAMIC PROCESS OF THE ILLUMINATION OF GAAS.physical review b,50(8),5189-5195. |
| MLA | REN GB,et al."THEORETICAL INVESTIGATION OF THE DYNAMIC PROCESS OF THE ILLUMINATION OF GAAS".physical review b 50.8(1994):5189-5195. |
入库方式： OAI收割
来源：半导体研究所
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