NEW FORMATION MECHANISM OF ELECTRIC-FIELD DOMAIN DUE TO GAMMA-X SEQUENTIAL TUNNELING IN GAAS/ALAS SUPERLATTICES
文献类型：期刊论文
| 作者 | ZHANG YH ; YANG XP ; LIU W ; ZHANG PH ; JIANG DS |
| 刊名 | applied physics letters
 |
| 出版日期 | 1994 |
| 卷号 | 65期号:9页码:1148-1150 |
| 关键词 | QUANTUM-WELL STRUCTURES INFRARED DETECTOR TRANSPORT |
| ISSN号 | 0003-6951 |
| 通讯作者 | zhang yh chinese acad sciinst semicondnatl lab superlatt & microstructbeijing 100083peoples r china |
| 中文摘要 | we have studied the sequential tunneling of doped weakly coupled gaas/alas superlattices (sls), whose ground state of the x valley in alas layers is designed to be located between the ground state (e(gamma1)) and the first excited state (e(gamma2)) of the gamma valley in gaas wells. the experimental results demonstrate that the high electric field domain in these sls is attributed to the gamma-x sequential tunneling instead of the usual sequential resonant tunneling between subbands in adjacent wells. within this kind of high field domain, electrons from the ground state in the gaas well tunnel to the ground state of the x valley in the nearest alas layer, then through very rapid real-space transfer relax from the x valley in the alas layer to the ground state of the gamma valley of the next gaas well. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13979]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | ZHANG YH,YANG XP,LIU W,et al. NEW FORMATION MECHANISM OF ELECTRIC-FIELD DOMAIN DUE TO GAMMA-X SEQUENTIAL TUNNELING IN GAAS/ALAS SUPERLATTICES[J]. applied physics letters,1994,65(9):1148-1150. |
| APA | ZHANG YH,YANG XP,LIU W,ZHANG PH,&JIANG DS.(1994).NEW FORMATION MECHANISM OF ELECTRIC-FIELD DOMAIN DUE TO GAMMA-X SEQUENTIAL TUNNELING IN GAAS/ALAS SUPERLATTICES.applied physics letters,65(9),1148-1150. |
| MLA | ZHANG YH,et al."NEW FORMATION MECHANISM OF ELECTRIC-FIELD DOMAIN DUE TO GAMMA-X SEQUENTIAL TUNNELING IN GAAS/ALAS SUPERLATTICES".applied physics letters 65.9(1994):1148-1150. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。