PASSIVATION OF COPPER BY LITHIUM IN P-TYPE GAAS
文献类型：期刊论文
| 作者 | EGILSSON T ; GISLASON HP ; YANG BH |
| 刊名 | physical review b
 |
| 出版日期 | 1994 |
| 卷号 | 50期号:3页码:1996-1998 |
| 关键词 | PHOTO-LUMINESCENCE DEUTERIUM IMPURITY DEFECTS CU |
| ISSN号 | 0163-1829 |
| 通讯作者 | egilsson t univ iceland inst sci dunhaga 3 is-107 reykjavik iceland |
| 中文摘要 | we report the passivation of two deep copper-related acceptor levels in cu-diffused p-type gaas by the group-i element lithium. the deep-level-transient-spectroscopy (dlts) signals of the well-known cu-related levels with apparent activation energies 0.15 ev and 0.40 ev disappear in cu-diffused samples when they are diffused with li, but can be reactivated by annealing. photoluminescence measurements show a corresponding disappearance and reappearance of the copper-related luminescence at 1.36 ev. also we observe with dlt's an energy level at e(v) + 0.32 ev in the cu-li-diff-used samples. the level is neither present in the cu-diffused samples before li diffusion nor in cu-li-diffused samples after annealing. as the level is not observed in starting materials or solely li-diffused samples we suggest that it is related to a cu-li complex. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13983]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | EGILSSON T,GISLASON HP,YANG BH. PASSIVATION OF COPPER BY LITHIUM IN P-TYPE GAAS[J]. physical review b,1994,50(3):1996-1998. |
| APA | EGILSSON T,GISLASON HP,&YANG BH.(1994).PASSIVATION OF COPPER BY LITHIUM IN P-TYPE GAAS.physical review b,50(3),1996-1998. |
| MLA | EGILSSON T,et al."PASSIVATION OF COPPER BY LITHIUM IN P-TYPE GAAS".physical review b 50.3(1994):1996-1998. |
入库方式： OAI收割
来源：半导体研究所
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