ON THE DANGLING-BOND RELAXATION PROBLEM IN HYDROGENATED AMORPHOUS-SILICON
文献类型：期刊论文
| 作者 | KAZANSKII AG ; MAO Y ; KONG GL |
| 刊名 | solid state communications
 |
| 出版日期 | 1994 |
| 卷号 | 91期号:6页码:447-449 |
| 关键词 | A-SI-H |
| ISSN号 | 0038-1098 |
| 通讯作者 | kazanskii ag chinese acad sciinst semicondbeijing 100083peoples r china |
| 中文摘要 | the influence of pulsed bias light excitation on the absorption in the defect region of undoped a-si:h film has been investigated. ac constant photocurrent method has been used to measure the absorption spectrum. the absorption in the defect region increases with the light pulse duration.the analysis of obtained results does not support the existence of a long time relaxation process of dangling-bond states in a-si:h. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13985]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | KAZANSKII AG,MAO Y,KONG GL. ON THE DANGLING-BOND RELAXATION PROBLEM IN HYDROGENATED AMORPHOUS-SILICON[J]. solid state communications,1994,91(6):447-449. |
| APA | KAZANSKII AG,MAO Y,&KONG GL.(1994).ON THE DANGLING-BOND RELAXATION PROBLEM IN HYDROGENATED AMORPHOUS-SILICON.solid state communications,91(6),447-449. |
| MLA | KAZANSKII AG,et al."ON THE DANGLING-BOND RELAXATION PROBLEM IN HYDROGENATED AMORPHOUS-SILICON".solid state communications 91.6(1994):447-449. |
入库方式： OAI收割
来源：半导体研究所
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