ESTIMATION OF THE STRAIN STATE OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES BY DOUBLE-CRYSTAL X-RAY-DIFFRACTION
文献类型：期刊论文
| 作者 | DUAN XF ; FUNG KK ; CHU YM |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1994 |
| 卷号 | 141期号:0页码:103-108 |
| 关键词 | BEAM ELECTRON-DIFFRACTION EPITAXIAL LAYERS |
| ISSN号 | 0022-0248 |
| 通讯作者 | duan xf chinese acad scibeijing lab electron microscopypob 2724100080 beijingpeoples r china |
| 中文摘要 | 20-period strained-layer superlattices of nominal composition and width ge0.2si0.8 (5 nm)/si(25 nm) and ge0.5si0.5 (5 nm)/si(25 nm) were studied by double-crystal x-ray diffraction. the ge content x was determined by computer simulation of the diffraction features from the superlattice. this method is shown to be independent of the relaxation of the superlattice. alternatively, x can be obtained from the measured difference deltaa/a in lattice spacing perpendicular to the growth plane. it is sensitive to the relaxation. comparing the results obtained in these two different ways, information about the relaxation of the superlattices can be obtained. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13987]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | DUAN XF,FUNG KK,CHU YM. ESTIMATION OF THE STRAIN STATE OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES BY DOUBLE-CRYSTAL X-RAY-DIFFRACTION[J]. journal of crystal growth,1994,141(0):103-108. |
| APA | DUAN XF,FUNG KK,&CHU YM.(1994).ESTIMATION OF THE STRAIN STATE OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES BY DOUBLE-CRYSTAL X-RAY-DIFFRACTION.journal of crystal growth,141(0),103-108. |
| MLA | DUAN XF,et al."ESTIMATION OF THE STRAIN STATE OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES BY DOUBLE-CRYSTAL X-RAY-DIFFRACTION".journal of crystal growth 141.0(1994):103-108. |
入库方式： OAI收割
来源：半导体研究所
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