中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
SIMULATION OF LATERAL CONFINEMENT IN VERY NARROW CHANNELS

文献类型:期刊论文

作者DU QH ; WANG ZG ; MAO JM
刊名physical review b
出版日期1994
卷号49期号:24页码:17452-17455
关键词ONE-DIMENSIONAL CONDUCTION PARABOLIC QUANTUM-WELL 2D ELECTRON-GAS MAGNETIC DEPOPULATION MAGNETOOPTICAL ABSORPTION SUBBANDS WIRES HETEROSTRUCTURES HETEROJUNCTION STATES
ISSN号0163-1829
通讯作者du qh china ctr adv sci & technolworld labpob 8730beijing 100080peoples r china
中文摘要a theoretical study is presented of the lateral confinement potential (cp) in the very narrow mesa channels fabricated in the conventional two-dimensional (2d) electron gas in gaas-alxga1-xas heterostructures. the id electronic structures are calculated in the framework of the confinement potential: v(x) = m* omega0(2)x2/2 for absolute value of x
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-11-15
源URL[http://ir.semi.ac.cn/handle/172111/13993]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
DU QH,WANG ZG,MAO JM. SIMULATION OF LATERAL CONFINEMENT IN VERY NARROW CHANNELS[J]. physical review b,1994,49(24):17452-17455.
APA DU QH,WANG ZG,&MAO JM.(1994).SIMULATION OF LATERAL CONFINEMENT IN VERY NARROW CHANNELS.physical review b,49(24),17452-17455.
MLA DU QH,et al."SIMULATION OF LATERAL CONFINEMENT IN VERY NARROW CHANNELS".physical review b 49.24(1994):17452-17455.

入库方式: OAI收割

来源:半导体研究所

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