SIMULATION OF LATERAL CONFINEMENT IN VERY NARROW CHANNELS
文献类型:期刊论文
作者 | DU QH ; WANG ZG ; MAO JM |
刊名 | physical review b
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出版日期 | 1994 |
卷号 | 49期号:24页码:17452-17455 |
关键词 | ONE-DIMENSIONAL CONDUCTION PARABOLIC QUANTUM-WELL 2D ELECTRON-GAS MAGNETIC DEPOPULATION MAGNETOOPTICAL ABSORPTION SUBBANDS WIRES HETEROSTRUCTURES HETEROJUNCTION STATES |
ISSN号 | 0163-1829 |
通讯作者 | du qh china ctr adv sci & technolworld labpob 8730beijing 100080peoples r china |
中文摘要 | a theoretical study is presented of the lateral confinement potential (cp) in the very narrow mesa channels fabricated in the conventional two-dimensional (2d) electron gas in gaas-alxga1-xas heterostructures. the id electronic structures are calculated in the framework of the confinement potential: v(x) = m* omega0(2)x2/2 for absolute value of x |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-11-15 |
源URL | [http://ir.semi.ac.cn/handle/172111/13993] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | DU QH,WANG ZG,MAO JM. SIMULATION OF LATERAL CONFINEMENT IN VERY NARROW CHANNELS[J]. physical review b,1994,49(24):17452-17455. |
APA | DU QH,WANG ZG,&MAO JM.(1994).SIMULATION OF LATERAL CONFINEMENT IN VERY NARROW CHANNELS.physical review b,49(24),17452-17455. |
MLA | DU QH,et al."SIMULATION OF LATERAL CONFINEMENT IN VERY NARROW CHANNELS".physical review b 49.24(1994):17452-17455. |
入库方式: OAI收割
来源:半导体研究所
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