RECRYSTALLIZATION, IMPURITY MIGRATION AND OPTICAL ACTIVATION OF YB-IMPLANTED SILICON INDUCED BY RAPID THERMAL ANNEALING
文献类型：期刊论文
| 作者 | XU TB ; ZHU PR ; LI DQ ; REN TQ ; SUN HL ; WAN SK |
| 刊名 | physics letters a
 |
| 出版日期 | 1994 |
| 卷号 | 189期号:5页码:423-427 |
| 关键词 | LONGITUDINAL MODE-OPERATION RUTHERFORD BACKSCATTERING ERBIUM ELECTROLUMINESCENCE LASERS |
| ISSN号 | 0375-9601 |
| 通讯作者 | xu tb chinese acad sciinst physbeijing 100080peoples r china |
| 中文摘要 | the rapid thermal annealing temperature dependence of the recrystallization, yb migration and its optical activation were studied for yb-implanted silicon. for the annealing regime 800-1000-degrees-c, the yb segregates both at the crystal/amorphous interface and at the surface, which is different from the usual segregation of er at the crystal/amorphous interface, and the efficiency of optical activation also increases with annealing temperature. however, the amorphous layer regrows completely and no photoluminescence is observed after the annealing at 1200-degrees-c. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/13995]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | XU TB,ZHU PR,LI DQ,et al. RECRYSTALLIZATION, IMPURITY MIGRATION AND OPTICAL ACTIVATION OF YB-IMPLANTED SILICON INDUCED BY RAPID THERMAL ANNEALING[J]. physics letters a,1994,189(5):423-427. |
| APA | XU TB,ZHU PR,LI DQ,REN TQ,SUN HL,&WAN SK.(1994).RECRYSTALLIZATION, IMPURITY MIGRATION AND OPTICAL ACTIVATION OF YB-IMPLANTED SILICON INDUCED BY RAPID THERMAL ANNEALING.physics letters a,189(5),423-427. |
| MLA | XU TB,et al."RECRYSTALLIZATION, IMPURITY MIGRATION AND OPTICAL ACTIVATION OF YB-IMPLANTED SILICON INDUCED BY RAPID THERMAL ANNEALING".physics letters a 189.5(1994):423-427. |
入库方式： OAI收割
来源：半导体研究所
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