PHOTOELECTROCHEMICAL BEHAVIOR OF THE GAAS/ALXGA1-XAS SUPERLATTICE ELECTRODE/ELECTROLYTE INTERFACE
文献类型：期刊论文
| 作者 | LIU Y ; XIAO XR ; LI XP ; REN XM ; ZHENG HQ ; ZENG YP ; YAN CH ; SUN DZ |
| 刊名 | chinese physics letters
 |
| 出版日期 | 1994 |
| 卷号 | 11期号:4页码:239-241 |
| ISSN号 | 0256-307x |
| 关键词 | PHOTOCURRENT SPECTROSCOPY |
| 通讯作者 | liu y acad sinicactr photoelectrocheminst photog chembeijing 100101peoples r china |
| 中文摘要 | single and multiple quantum wells of lattice-matched superlattices material gaas/alxga1-xas have been studied as photoelectrodes in photoelectrochemical cells containing nonaqueous electrolyte. structural photocurrent spectra in the potential range of -1.8 to 1.0 v (vs standard calomel electrode) were obtained. the quantum yields for both superlattice electrodes were estimated and compared. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14005]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | LIU Y,XIAO XR,LI XP,et al. PHOTOELECTROCHEMICAL BEHAVIOR OF THE GAAS/ALXGA1-XAS SUPERLATTICE ELECTRODE/ELECTROLYTE INTERFACE[J]. chinese physics letters,1994,11(4):239-241. |
| APA | LIU Y.,XIAO XR.,LI XP.,REN XM.,ZHENG HQ.,...&SUN DZ.(1994).PHOTOELECTROCHEMICAL BEHAVIOR OF THE GAAS/ALXGA1-XAS SUPERLATTICE ELECTRODE/ELECTROLYTE INTERFACE.chinese physics letters,11(4),239-241. |
| MLA | LIU Y,et al."PHOTOELECTROCHEMICAL BEHAVIOR OF THE GAAS/ALXGA1-XAS SUPERLATTICE ELECTRODE/ELECTROLYTE INTERFACE".chinese physics letters 11.4(1994):239-241. |
入库方式： OAI收割
来源：半导体研究所
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