HIGH-QUALITY INGAP AND INGAP/INALP MULTIPLE-QUANTUM-WELL GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
文献类型：期刊论文
| 作者 | YAN CH ; SUN DZ ; GUO HX ; LI XB ; ZU SR ; HUANG YH ; ZHENG YP ; KONG MY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1994 |
| 卷号 | 136期号:0页码:306-309 |
| ISSN号 | 0022-0248 |
| 关键词 | DOUBLE-HETEROSTRUCTURE |
| 通讯作者 | yan ch chinese acad sciinst semicondpob 912beijing 100083peoples r china |
| 中文摘要 | using gas-source molecular beam epitaxy, we have obtained high-quality gainp and (alga)inp epilayers lattice-matched to (100) gaas substrates. all grown layers exhibited mirror-like surfaces. for a 1.7 mum thick ga0.5in0.5p film, the hall electron mobility was 3400 and 30,000 cm2/v. s at 300 and 77 k, respectively. the luminescence wavelength of (alxga1-x)inp samples ranged from 680 nm (for gainp) to 590 nm (for alinp) at room temperature, and from 644 to 513 nm at 77 k. the multiple quantum well (mqw) structure with well width of 40 angstrom showed strong luminescence intensity with wavelength of 647 nm (300 k) or 622 nm (80 k). the satellite peaks can be detected in double-crystal x-ray (dcxr) diffraction measurements of the mqw samples, which indicates the perfect structural periodicity. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14007]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | YAN CH,SUN DZ,GUO HX,et al. HIGH-QUALITY INGAP AND INGAP/INALP MULTIPLE-QUANTUM-WELL GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY[J]. journal of crystal growth,1994,136(0):306-309. |
| APA | YAN CH.,SUN DZ.,GUO HX.,LI XB.,ZU SR.,...&KONG MY.(1994).HIGH-QUALITY INGAP AND INGAP/INALP MULTIPLE-QUANTUM-WELL GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY.journal of crystal growth,136(0),306-309. |
| MLA | YAN CH,et al."HIGH-QUALITY INGAP AND INGAP/INALP MULTIPLE-QUANTUM-WELL GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY".journal of crystal growth 136.0(1994):306-309. |
入库方式： OAI收割
来源：半导体研究所
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