HYDROGEN DIFFUSION IN A-SI-H/A-SI STRUCTURE UNDER ELECTRICAL BIAS
文献类型：期刊论文
| 作者 | SONG ZZ ; ZHAN FQ ; YU G ; KONG GL ; CHEN GH |
| 刊名 | journal of non-crystalline solids
 |
| 出版日期 | 1993 |
| 卷号 | 166期号:0页码:305-308 |
| 关键词 | AMORPHOUS-SILICON CONDUCTIVITY CHANGES |
| ISSN号 | 0022-3093 |
| 通讯作者 | song zz lanzhou univdept physlanzhou 730000peoples r china |
| 中文摘要 | by using the technique of elastic recoil detection (erd), we have measured the hydrogen profiles in a-si:h/a-si structure samples annealed at various temperatures with and without electrical bias, and investigated the influence of electrical bias on hydrogen diffusion. the results show that hydrogen diffusion in a-si is significantly enhanced by the action of electrical bias. the existence of the excess carriers, which are introduced by electrical injection, is considered to be responsible for the enhancement of hydrogen diffusion, and the microprocess of hydrogen transport has been exploited. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14025]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | SONG ZZ,ZHAN FQ,YU G,et al. HYDROGEN DIFFUSION IN A-SI-H/A-SI STRUCTURE UNDER ELECTRICAL BIAS[J]. journal of non-crystalline solids,1993,166(0):305-308. |
| APA | SONG ZZ,ZHAN FQ,YU G,KONG GL,&CHEN GH.(1993).HYDROGEN DIFFUSION IN A-SI-H/A-SI STRUCTURE UNDER ELECTRICAL BIAS.journal of non-crystalline solids,166(0),305-308. |
| MLA | SONG ZZ,et al."HYDROGEN DIFFUSION IN A-SI-H/A-SI STRUCTURE UNDER ELECTRICAL BIAS".journal of non-crystalline solids 166.0(1993):305-308. |
入库方式： OAI收割
来源：半导体研究所
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