BAND-OFFSET OF GAAS-GAINP HETEROJUNCTIONS
文献类型：期刊论文
| 作者 | FENG SL ; KRYNICKI J ; DONCHEV V ; BOURGOIN JC ; DIFORTEPOISSON M ; BRYLINSKI C ; DELAGE S ; BLANCK H ; ALAYA S |
| 刊名 | semiconductor science and technology
 |
| 出版日期 | 1993 |
| 卷号 | 8期号:12页码:2092-2096 |
| 关键词 | CONDUCTION-BAND PHASE EPITAXY VALENCE VOLTAGE |
| ISSN号 | 0268-1242 |
| 通讯作者 | feng sl univ paris 07phys solides grpcnrstour 232 pl jussieuf-75251 paris 05france |
| 中文摘要 | n+ gaas-n gainp lattice-matched heterostructures, grown by metalorganic vapour phase epitaxy, have been studied by capacitance-voltage, current-voltage and current-temperature techniques. this allowed the determination of the conduction band offset in three different and independent ways. the value obtained (0.24-0.25 ev) has been verified by photoluminescence and photoluminescence excitation on a 90 angstrom thick gaas well in gainp grown under the same conditions. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14029]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | FENG SL,KRYNICKI J,DONCHEV V,et al. BAND-OFFSET OF GAAS-GAINP HETEROJUNCTIONS[J]. semiconductor science and technology,1993,8(12):2092-2096. |
| APA | FENG SL.,KRYNICKI J.,DONCHEV V.,BOURGOIN JC.,DIFORTEPOISSON M.,...&ALAYA S.(1993).BAND-OFFSET OF GAAS-GAINP HETEROJUNCTIONS.semiconductor science and technology,8(12),2092-2096. |
| MLA | FENG SL,et al."BAND-OFFSET OF GAAS-GAINP HETEROJUNCTIONS".semiconductor science and technology 8.12(1993):2092-2096. |
入库方式： OAI收割
来源：半导体研究所
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