MULTIPLE PEAK PHOTOLUMINESCENCE OF POROUS SILICON
文献类型：期刊论文
| 作者 | CHEAH KW ; CHAN T ; LEE WL ; TENG D ; ZHENG WH ; WANG QM |
| 刊名 | applied physics letters
 |
| 出版日期 | 1993 |
| 卷号 | 63期号:25页码:3464-3466 |
| 关键词 | OPTICAL-PROPERTIES |
| ISSN号 | 0003-6951 |
| 通讯作者 | cheah kw hong kong baptist colldept physkowloonhong kong |
| 中文摘要 | the photoluminescence (pl) response of porous silicon is usually in the form of a single broad peak. recently, however, pl response with two peaks has been reported. here we report the observation of multiple peaks in the pl spectrum of porous silicon. a simple modeling of the line shape indicates that four peaks exist within the response curve, and analysis suggests that the pl of porous silicon is derived from quantum confinement in the silicon crystallites. the line shapes can be due to either minibands within the conduction and valence bands or crystallite size variation or a combination of the two. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14033]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | CHEAH KW,CHAN T,LEE WL,et al. MULTIPLE PEAK PHOTOLUMINESCENCE OF POROUS SILICON[J]. applied physics letters,1993,63(25):3464-3466. |
| APA | CHEAH KW,CHAN T,LEE WL,TENG D,ZHENG WH,&WANG QM.(1993).MULTIPLE PEAK PHOTOLUMINESCENCE OF POROUS SILICON.applied physics letters,63(25),3464-3466. |
| MLA | CHEAH KW,et al."MULTIPLE PEAK PHOTOLUMINESCENCE OF POROUS SILICON".applied physics letters 63.25(1993):3464-3466. |
入库方式： OAI收割
来源：半导体研究所
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