RADIATIVE RECOMBINATION IN N-TYPE AND P-TYPE GAAS COMPENSATED WITH LI
文献类型：期刊论文
| 作者 | GISLASON HP ; YANG BH ; PETURSSON J ; LINNARSSON M |
| 刊名 | journal of applied physics
 |
| 出版日期 | 1993 |
| 卷号 | 74期号:12页码:7275-7287 |
| 关键词 | IMPLANTED GAAS EMISSION |
| ISSN号 | 0021-8979 |
| 通讯作者 | gislason hp univ icelandinst scidunhaga 3is-107 reykjavikiceland |
| 中文摘要 | we report fundamental changes of the radiative recombination in a wide range of n-type and p-type gaas after diffusion with the group-i element li. these optical properties are found to be a bulk property and closely related to the electrical conductivity of the samples. in the li-doped samples the radiative recombination is characterized by emissions with excitation-dependent peak positions which shift to lower energies with increasing degree of compensation and concentration of li. these properties are shown to be in qualitative agreement with fluctuations of the electrostatic potential in strongly compensated systems. for li-diffusion temperatures above 700-800-degrees-c semi-insulating conditions with electrical resistivity exceeding 10(7) omega cm are obtained for all conducting starting materials. in this heavy li-doping regime, the simple model of fluctuating potentials is shown to be inadequate for explaining the. experimental observations unless the number of charged impurities is reduced through complexing with li. for samples doped with low concentrations of li, on the other hand, the photoluminescence properties are found to be characteristic of impurity-related emissions. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14035]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | GISLASON HP,YANG BH,PETURSSON J,et al. RADIATIVE RECOMBINATION IN N-TYPE AND P-TYPE GAAS COMPENSATED WITH LI[J]. journal of applied physics,1993,74(12):7275-7287. |
| APA | GISLASON HP,YANG BH,PETURSSON J,&LINNARSSON M.(1993).RADIATIVE RECOMBINATION IN N-TYPE AND P-TYPE GAAS COMPENSATED WITH LI.journal of applied physics,74(12),7275-7287. |
| MLA | GISLASON HP,et al."RADIATIVE RECOMBINATION IN N-TYPE AND P-TYPE GAAS COMPENSATED WITH LI".journal of applied physics 74.12(1993):7275-7287. |
入库方式： OAI收割
来源：半导体研究所
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