ANTICROSSING DUE TO RESONANT COUPLING OF HOLE LEVELS IN ASYMMETRIC COUPLED-QUANTUM-WELLS
文献类型：期刊论文
| 作者 | XU SJ ; JIANG DS ; LI GH ; ZHANG YH ; LUO JS |
| 刊名 | chinese physics letters
 |
| 出版日期 | 1993 |
| 卷号 | 10期号:7页码:433-436 |
| 关键词 | OSCILLATIONS |
| ISSN号 | 0256-307x |
| 通讯作者 | xu sj acad sinicainst semicondnatl lab superlattices & microstructbeijing 100083peoples r china |
| 中文摘要 | we present distinct evidence of anticrossing behavior for excitonic transitions due to resonant coupling of heavy-hole ground levels in a biased gaas/al0.35ga0.65as/gaas (50/40/100 angstrom) asymmetric coupled-double-quantum-wells p-i-n structure by using photoluminescence spectra. the minimum level splitting is about 2.5 mev. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14039]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | XU SJ,JIANG DS,LI GH,et al. ANTICROSSING DUE TO RESONANT COUPLING OF HOLE LEVELS IN ASYMMETRIC COUPLED-QUANTUM-WELLS[J]. chinese physics letters,1993,10(7):433-436. |
| APA | XU SJ,JIANG DS,LI GH,ZHANG YH,&LUO JS.(1993).ANTICROSSING DUE TO RESONANT COUPLING OF HOLE LEVELS IN ASYMMETRIC COUPLED-QUANTUM-WELLS.chinese physics letters,10(7),433-436. |
| MLA | XU SJ,et al."ANTICROSSING DUE TO RESONANT COUPLING OF HOLE LEVELS IN ASYMMETRIC COUPLED-QUANTUM-WELLS".chinese physics letters 10.7(1993):433-436. |
入库方式： OAI收割
来源：半导体研究所
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