THEORETICAL TREATMENT OF A3B5 CHLORIDE VAPOR-PHASE EPITAXY - GROWTH, DOPING, OPTIMIZATION
文献类型：期刊论文
| 作者 | DOSTOV VL ; IPATOVA IP ; KULIKOV AY |
| 刊名 | semiconductor science and technology
 |
| 出版日期 | 1993 |
| 卷号 | 8期号:11页码:1935-1943 |
| 关键词 | GAAS SYSTEM VPE |
| ISSN号 | 0268-1242 |
| 通讯作者 | dostov vl ioffe instst petersburg 194021russia |
| 中文摘要 | a theoretical description of chloride vapour-phase epitaxy (cvpe) has been proposed which contains two-dimensional (2d) gas-dynamic equations for transport of reactive components and kinetic equations for surface growth processes connected by nonlinear adiabatic boundary conditions. no one of these stages is supposed to be the limiting one. calculated variations of growth rate and impurity concentrations along the growing layer fit experimental data well. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14043]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | DOSTOV VL,IPATOVA IP,KULIKOV AY. THEORETICAL TREATMENT OF A3B5 CHLORIDE VAPOR-PHASE EPITAXY - GROWTH, DOPING, OPTIMIZATION[J]. semiconductor science and technology,1993,8(11):1935-1943. |
| APA | DOSTOV VL,IPATOVA IP,&KULIKOV AY.(1993).THEORETICAL TREATMENT OF A3B5 CHLORIDE VAPOR-PHASE EPITAXY - GROWTH, DOPING, OPTIMIZATION.semiconductor science and technology,8(11),1935-1943. |
| MLA | DOSTOV VL,et al."THEORETICAL TREATMENT OF A3B5 CHLORIDE VAPOR-PHASE EPITAXY - GROWTH, DOPING, OPTIMIZATION".semiconductor science and technology 8.11(1993):1935-1943. |
入库方式： OAI收割
来源：半导体研究所
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