ELECTRIC-FIELD-INDUCED EXCITON-LINEWIDTH BROADENING IN SHORT-PERIOD GAAS/GAXAL1-XAS SUPERLATTICES
文献类型：期刊论文
| 作者 | ZHANG YH ; JIANG DS ; LI F ; WU RH ; ZHOU JM ; MEI XB |
| 刊名 | physical review b
 |
| 出版日期 | 1993 |
| 卷号 | 48期号:16页码:12296-12299 |
| 关键词 | GAAS-GAALAS SUPERLATTICES QUANTUM-WELL STRUCTURES SEMICONDUCTOR SUPERLATTICES INDUCED LOCALIZATION BLUE SHIFT BISTABILITY ABSORPTION |
| ISSN号 | 0163-1829 |
| 通讯作者 | zhang yh chinese acad scinatl lab superlattices & microstructinst semicondbeijing 100083peoples r china |
| 中文摘要 | we have investigated the wannier-stark effect in gaas/gaal1-xas superlattices under electric fields by photocurrent spectroscopy measurements in the range of temperatures 10-300 k. the linewidth of the oh stark-ladder exciton was found to increase significantly along with an increase in peak intensity when the electric field increases. we present a mechanism based on an enhanced interface roughness scattering of electronic states due to wannier-stark localization in order to explain this increased broadening with electric field. this electric-field-related scattering mechanism will weaken the negative differential conductance effects in superlattices predicted by esaki and tsu. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14045]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | ZHANG YH,JIANG DS,LI F,et al. ELECTRIC-FIELD-INDUCED EXCITON-LINEWIDTH BROADENING IN SHORT-PERIOD GAAS/GAXAL1-XAS SUPERLATTICES[J]. physical review b,1993,48(16):12296-12299. |
| APA | ZHANG YH,JIANG DS,LI F,WU RH,ZHOU JM,&MEI XB.(1993).ELECTRIC-FIELD-INDUCED EXCITON-LINEWIDTH BROADENING IN SHORT-PERIOD GAAS/GAXAL1-XAS SUPERLATTICES.physical review b,48(16),12296-12299. |
| MLA | ZHANG YH,et al."ELECTRIC-FIELD-INDUCED EXCITON-LINEWIDTH BROADENING IN SHORT-PERIOD GAAS/GAXAL1-XAS SUPERLATTICES".physical review b 48.16(1993):12296-12299. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。