LITHIUM PASSIVATION OF ZN AND CD ACCEPTORS IN P-TYPE GAAS
文献类型：期刊论文
| 作者 | YANG BH ; GISLASON HP ; LINNARSSON M |
| 刊名 | physical review b
 |
| 出版日期 | 1993 |
| 卷号 | 48期号:16页码:12345-12348 |
| 关键词 | HYDROGEN PASSIVATION SILICON NEUTRALIZATION |
| ISSN号 | 0163-1829 |
| 通讯作者 | yang bh univ icelandinst scidunhaga 3is-107 reykjavikiceland |
| 中文摘要 | we report lithium passivation of the shallow acceptors zn and cd in p-type gaas which we attribute to the formation of neutral li-zn and li-cd complexes. similar to hydrogen, another group-i element, lithium strongly reduces the concentration of free holes when introduced into p-type gaas. the passivation is inferred from an increase of both the hole mobility and the resisitivity throughout the bulk of the sample. it is observed most clearly for li concentrations comparable to the shallow-acceptor concentration. in addition, compensation of shallow acceptors by randomly distributed donors is present in varying degree in the li-diffused samples. unlike hydrogenation of n-type gaas, li doping shows no evidence of neutralizing shallow donors in gaas. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14047]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | YANG BH,GISLASON HP,LINNARSSON M. LITHIUM PASSIVATION OF ZN AND CD ACCEPTORS IN P-TYPE GAAS[J]. physical review b,1993,48(16):12345-12348. |
| APA | YANG BH,GISLASON HP,&LINNARSSON M.(1993).LITHIUM PASSIVATION OF ZN AND CD ACCEPTORS IN P-TYPE GAAS.physical review b,48(16),12345-12348. |
| MLA | YANG BH,et al."LITHIUM PASSIVATION OF ZN AND CD ACCEPTORS IN P-TYPE GAAS".physical review b 48.16(1993):12345-12348. |
入库方式： OAI收割
来源：半导体研究所
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