EFFECTS OF AN EXTERNAL MAGNETIC-FIELD ON SHALLOW DONOR LEVELS IN SEMICONDUCTORS
文献类型：期刊论文
| 作者 | MU YM ; PENG JP ; LIU PL ; SHEN SC ; ZHU JB |
| 刊名 | physical review b
 |
| 出版日期 | 1993 |
| 卷号 | 48期号:15页码:10864-10869 |
| ISSN号 | 0163-1829 |
| 关键词 | GERMANIUM |
| 通讯作者 | mu ym chinese ctr adv sci & technolworld labpob 8730beijing 100080peoples r china |
| 中文摘要 | an extension of faulkner's method for the energy levels of the shallow donor in silicon and germanium at zero field is made in order to investigate the effects of a magnetic field upon the excited states. the effective-mass hamiltonian matrix elements of an electron bound to a donor center and subjected to a magnetic field b, which involves both the linear and quadratic terms of magnetic field, are expressed analytically and matrices are solved numerically. the photothermal ionization spectroscopy of phosphorus in ultrapure silicon for magnetic fields parallel to the [1,0,0] and [1,1,1] directions and up to 10 t is explained successfully. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14049]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | MU YM,PENG JP,LIU PL,et al. EFFECTS OF AN EXTERNAL MAGNETIC-FIELD ON SHALLOW DONOR LEVELS IN SEMICONDUCTORS[J]. physical review b,1993,48(15):10864-10869. |
| APA | MU YM,PENG JP,LIU PL,SHEN SC,&ZHU JB.(1993).EFFECTS OF AN EXTERNAL MAGNETIC-FIELD ON SHALLOW DONOR LEVELS IN SEMICONDUCTORS.physical review b,48(15),10864-10869. |
| MLA | MU YM,et al."EFFECTS OF AN EXTERNAL MAGNETIC-FIELD ON SHALLOW DONOR LEVELS IN SEMICONDUCTORS".physical review b 48.15(1993):10864-10869. |
入库方式： OAI收割
来源：半导体研究所
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