WANNIER-STARK LOCALIZATION IN INGAAS/GAAS SUPERLATTICES AND ITS APPLICATION TO ELECTROOPTICAL DEVICES
文献类型：期刊论文
| 作者 | LIU W ; ZHANG YH ; JIANG DS ; WANG RZ ; ZHOU JM ; MEI XB |
| 刊名 | journal of applied physics
 |
| 出版日期 | 1993 |
| 卷号 | 74期号:6页码:4274-4276 |
| 关键词 | ROOM-TEMPERATURE FIELD |
| ISSN号 | 0021-8979 |
| 通讯作者 | liu w beijing normal univdept physbeijing 100088peoples r china |
| 中文摘要 | we have observed wannier-stark localization in strained in0.2ga0.8as/gaas superlattices by low- and room-temperature photocurrent spectra measurements. the experimental results are well in agreement with the theoretical predictions. a large field-induced modulation response of the absorption edge of the superlattices at room temperature suggests the possibilities of the application to the design of various kinds of electro-optical devices operating at a wavelength of 0.98 mum, based on wannier-stark localization effects. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14055]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | LIU W,ZHANG YH,JIANG DS,et al. WANNIER-STARK LOCALIZATION IN INGAAS/GAAS SUPERLATTICES AND ITS APPLICATION TO ELECTROOPTICAL DEVICES[J]. journal of applied physics,1993,74(6):4274-4276. |
| APA | LIU W,ZHANG YH,JIANG DS,WANG RZ,ZHOU JM,&MEI XB.(1993).WANNIER-STARK LOCALIZATION IN INGAAS/GAAS SUPERLATTICES AND ITS APPLICATION TO ELECTROOPTICAL DEVICES.journal of applied physics,74(6),4274-4276. |
| MLA | LIU W,et al."WANNIER-STARK LOCALIZATION IN INGAAS/GAAS SUPERLATTICES AND ITS APPLICATION TO ELECTROOPTICAL DEVICES".journal of applied physics 74.6(1993):4274-4276. |
入库方式： OAI收割
来源：半导体研究所
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