INVESTIGATION OF BURIED ALN LAYERS FORMED BY NITROGEN IMPLANTATION INTO AL
文献类型：期刊论文
| 作者 | LIN C ; LI Y ; KILNER JA ; CHATER RJ ; LI J ; NEJIM A ; ZHANG JP ; HEMMENT PLF |
| 刊名 | nuclear instruments & methods in physics research section b-beam interactions with materials and atoms
 |
| 出版日期 | 1993 |
| 卷号 | 80-81期号:0页码:323-326 |
| ISSN号 | 0168-583x |
| 通讯作者 | lin c shanghai inst metion beam labshanghaipeoples r china |
| 中文摘要 | the composition and microstructure of buried layers of aln formed by high energy n+ ion implantation into polycrystalline al have been determined. both bulk and evaporated thin films of al have been implanted with 100 and 200 kev n+ ions to doses of up to 1.8 x 10(18)/cm2. the layers have been characterised using sims, xtem, x-ray diffraction, ftir, rbs and in terms of their microhardness. it is found that, for doses greater than the critical dose, buried, polycrystalline aln layers are formed with preferred (100) or (002) orientations, which are sample specific. with increasing dose the nitrogen concentration saturates at the value for stoichiometric aln although the synthesised compound is found to be rich in oxygen. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14077]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | LIN C,LI Y,KILNER JA,et al. INVESTIGATION OF BURIED ALN LAYERS FORMED BY NITROGEN IMPLANTATION INTO AL[J]. nuclear instruments & methods in physics research section b-beam interactions with materials and atoms,1993,80-81(0):323-326. |
| APA | LIN C.,LI Y.,KILNER JA.,CHATER RJ.,LI J.,...&HEMMENT PLF.(1993).INVESTIGATION OF BURIED ALN LAYERS FORMED BY NITROGEN IMPLANTATION INTO AL.nuclear instruments & methods in physics research section b-beam interactions with materials and atoms,80-81(0),323-326. |
| MLA | LIN C,et al."INVESTIGATION OF BURIED ALN LAYERS FORMED BY NITROGEN IMPLANTATION INTO AL".nuclear instruments & methods in physics research section b-beam interactions with materials and atoms 80-81.0(1993):323-326. |
入库方式： OAI收割
来源：半导体研究所
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