ELECTRON-TRANSPORT THROUGH GAALAS BARRIERS IN GAAS
文献类型：期刊论文
| 作者 | FENG SL ; KRYNICKI J ; ZAZOUI M ; BOURGOIN JC ; BOIS P ; ROSENCHER E |
| 刊名 | journal of applied physics
 |
| 出版日期 | 1993 |
| 卷号 | 74期号:1页码:341-345 |
| 关键词 | RESONANT TUNNELING DIODES CURRENT-VOLTAGE CHARACTERISTICS QUANTUM-WELLS ALGAAS GAAS SUPERLATTICES LAYERS |
| ISSN号 | 0021-8979 |
| 通讯作者 | feng sl univ paris 07cnrsphys solides grptour 232 pl jussieuf-75251 paris 05france |
| 中文摘要 | we have analyzed electronic transport through a single, 200-angstrom-thick, ga0.74al0.36as barrier embedded in gaas. at low temperatures and high electric field, the fowler-nordheim regime is observed, indicating that the barrier acts as insulating layers. at higher temperatures the thermionic regime provides an apparent barrier height, decreasing with the field, which is equal to the expected band offset when extrapolated to zero field. however, for some samples, the current is dominated by the presence of electron traps located in the barrier. a careful analysis of the temperature and field behavior of this current allows to deduce that the mechanism involved is field-enhanced emission from electron traps. the defects responsible are tentatively identified as dx centers, resulting from the contamination of the barrier by donor impurities. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14079]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | FENG SL,KRYNICKI J,ZAZOUI M,et al. ELECTRON-TRANSPORT THROUGH GAALAS BARRIERS IN GAAS[J]. journal of applied physics,1993,74(1):341-345. |
| APA | FENG SL,KRYNICKI J,ZAZOUI M,BOURGOIN JC,BOIS P,&ROSENCHER E.(1993).ELECTRON-TRANSPORT THROUGH GAALAS BARRIERS IN GAAS.journal of applied physics,74(1),341-345. |
| MLA | FENG SL,et al."ELECTRON-TRANSPORT THROUGH GAALAS BARRIERS IN GAAS".journal of applied physics 74.1(1993):341-345. |
入库方式： OAI收割
来源：半导体研究所
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