Laser SEU sensitivity mapping of deep submicron CMOS SRAM
文献类型：期刊论文
| 作者 | Yu, Yongtao; Feng, Guoqiang; Chen, Rui; Han, Jianwei |
| 刊名 | Journal of Semiconductors
 |
| 出版日期 | 2014 |
| 卷号 | 35期号:6 |
| ISSN号 | 1674-4926 |
| 通讯作者 | Yu, Y. (yuyongtao10@mails.ucas.ac.cn) |
| 英文摘要 | The pulsed laser facility for SEU sensitivity mapping is utilized to study the SEU sensitive regions of a 0.18 μm CMOS SRAM cell. Combined with the device layout micrograph, SEU sensitivity maps of the SRAM cell are obtained. TCAD simulation work is performed to examine the SEU sensitivity characteristics of the SRAM cell. The laser mapping experiment results are discussed and compared with the electron micrograph information of the SRAM cell and the TCAD simulation results. The results present that the test technique is reliable and of high mapping precision for the deep submicron technology device. © 2014 Chinese Institute of Electronics. |
| 收录类别 | EI |
| 语种 | 英语 |
| 源URL | [http://ir.nssc.ac.cn/handle/122/4368]  |
| 专题 | 国家空间科学中心_保障部/保障与试验验证中心 |
| 推荐引用方式 GB/T 7714 | Yu, Yongtao,Feng, Guoqiang,Chen, Rui,et al. Laser SEU sensitivity mapping of deep submicron CMOS SRAM[J]. Journal of Semiconductors,2014,35(6). |
| APA | Yu, Yongtao,Feng, Guoqiang,Chen, Rui,&Han, Jianwei.(2014).Laser SEU sensitivity mapping of deep submicron CMOS SRAM.Journal of Semiconductors,35(6). |
| MLA | Yu, Yongtao,et al."Laser SEU sensitivity mapping of deep submicron CMOS SRAM".Journal of Semiconductors 35.6(2014). |
入库方式： OAI收割
来源：国家空间科学中心
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