Correction of Single Event Latchup Rate Prediction Using Pulsed Laser Mapping Test
文献类型：期刊论文
| 作者 | Yu, Y. -T.; Han, J. -W.; Feng, G. -Q.; Cai, M. -H.; Chen, R. |
| 刊名 | IEEE TRANSACTIONS ON NUCLEAR SCIENCE
 |
| 出版日期 | 2015 |
| 卷号 | 62期号:2页码:565-570 |
| 关键词 | In-flight rate pulsed laser sensitivity mapping single event latchup (SEL) SRAM |
| ISSN号 | 0018-9499 |
| 通讯作者 | Yu, YT (reprint author), Univ Chinese Acad Sci, Beijing 100049, Peoples R China. |
| 英文摘要 | Most classical approaches of single event effect rate prediction are based on the rectangular parallelepiped model of sensitive volume. However it is not clear about the number of sensitive volume in the device when predicting the in-flight single event latchup rate. As for memory device, there are two empirical practices to deal with the latchup sensitive volume number: one assumes that there is only one sensitive volume in the whole device; another assumes that there are as much sensitive volumes as the number of memory cells. The latchup sensitive volume number of a 4M-bits SRAM is determined as 63360 using pulsed laser mapping test in this work first. Based on the two assumed and measured sensitive volume number, the single event latchup rates of the device are calculated and compared. The results show that pulsed laser could be a powerful tool to obtain the real sensitive volume number in the device, which is significant for single event latchup rate prediction. The latchup rate will be either overestimated or underestimated with the assumption of the sensitive volume number as one or as much as the number of memory cells. |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| 源URL | [http://ir.nssc.ac.cn/handle/122/4658]  |
| 专题 | 国家空间科学中心_保障部/保障与试验验证中心 |
| 推荐引用方式 GB/T 7714 | Yu, Y. -T.,Han, J. -W.,Feng, G. -Q.,et al. Correction of Single Event Latchup Rate Prediction Using Pulsed Laser Mapping Test[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2015,62(2):565-570. |
| APA | Yu, Y. -T.,Han, J. -W.,Feng, G. -Q.,Cai, M. -H.,&Chen, R..(2015).Correction of Single Event Latchup Rate Prediction Using Pulsed Laser Mapping Test.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,62(2),565-570. |
| MLA | Yu, Y. -T.,et al."Correction of Single Event Latchup Rate Prediction Using Pulsed Laser Mapping Test".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 62.2(2015):565-570. |
入库方式： OAI收割
来源：国家空间科学中心
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