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DETERMINATION OF THE CONDUCTION-BAND OFFSET OF A SINGLE ALGAAS BARRIER LAYER USING DEEP-LEVEL TRANSIENT SPECTROSCOPY
文献类型：期刊论文
| 作者 | ZHU QS ; MOU SM ; ZHOU XC ; ZHONG ZT |
| 刊名 | applied physics letters
 |
| 出版日期 | 1993 |
| 卷号 | 62期号:22页码:2813-2814 |
| 关键词 | QUANTUM WELLS HETEROSTRUCTURES GAAS |
| ISSN号 | 0003-6951 |
| 通讯作者 | zhu qs acad sinicainst semicondbeijing 100083peoples r china |
| 中文摘要 | the tunneling from an algaas confined thin layer to a gaas layer in the gaas/al0.33ga0.67as/gaas structure during the trapped electron emission from deep level in the algaas to its conduction band has been observed by deep level transient spectroscopy. with the aid of the tunneling effect, the conduction-band offset deltae(c) was determined to be 0.260 ev, corresponding to 63% of deltae(g). a calculation was also carried out based on this tunneling model by using the experimental value of deltae(c) = e2 - e1 = 0. 260 ev, and good agreement between the experimental and calculated curves is obtained. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14089]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | ZHU QS,MOU SM,ZHOU XC,et al. DETERMINATION OF THE CONDUCTION-BAND OFFSET OF A SINGLE ALGAAS BARRIER LAYER USING DEEP-LEVEL TRANSIENT SPECTROSCOPY[J]. applied physics letters,1993,62(22):2813-2814. |
| APA | ZHU QS,MOU SM,ZHOU XC,&ZHONG ZT.(1993).DETERMINATION OF THE CONDUCTION-BAND OFFSET OF A SINGLE ALGAAS BARRIER LAYER USING DEEP-LEVEL TRANSIENT SPECTROSCOPY.applied physics letters,62(22),2813-2814. |
| MLA | ZHU QS,et al."DETERMINATION OF THE CONDUCTION-BAND OFFSET OF A SINGLE ALGAAS BARRIER LAYER USING DEEP-LEVEL TRANSIENT SPECTROSCOPY".applied physics letters 62.22(1993):2813-2814. |
入库方式： OAI收割
来源：半导体研究所
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