SHIFTING PHOTOLUMINESCENCE BANDS IN HIGH-RESISTIVITY LI-COMPENSATED GAAS
文献类型：期刊论文
| 作者 | GISLASON HP ; YANG BH ; LINNARSSON M |
| 刊名 | physical review b
 |
| 出版日期 | 1993 |
| 卷号 | 47期号:15页码:9418-9424 |
| 关键词 | IMPLANTED GAAS EMISSION |
| ISSN号 | 0163-1829 |
| 通讯作者 | gislason hp univ icelandinst scidunhaga 3is-107 reykjavikiceland |
| 中文摘要 | it is shown that li diffusion of gaas can give rise to semi-insulating samples with electrical resistivity as high as 10(7) omegacm in undoped, n-type, and p-type starting materials. the optical properties of the compensated samples are correlated with the depletion of free carriers caused by the li diffusion. the radiative recombination of the li-compensated samples is dominated by emissions with excitation-dependent peak positions that shift to lower energies with increasing compensation. the photoluminescence properties are characteristic of fluctuations of the electrostatic potential in strongly doped, compensated crystals. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14099]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | GISLASON HP,YANG BH,LINNARSSON M. SHIFTING PHOTOLUMINESCENCE BANDS IN HIGH-RESISTIVITY LI-COMPENSATED GAAS[J]. physical review b,1993,47(15):9418-9424. |
| APA | GISLASON HP,YANG BH,&LINNARSSON M.(1993).SHIFTING PHOTOLUMINESCENCE BANDS IN HIGH-RESISTIVITY LI-COMPENSATED GAAS.physical review b,47(15),9418-9424. |
| MLA | GISLASON HP,et al."SHIFTING PHOTOLUMINESCENCE BANDS IN HIGH-RESISTIVITY LI-COMPENSATED GAAS".physical review b 47.15(1993):9418-9424. |
入库方式： OAI收割
来源：半导体研究所
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