GROWTH OF WIDE-BAND GAP IMMISCIBLE II-VI ALLOYS BY METALORGANIC VAPOR-PHASE EPITAXY
文献类型：期刊论文
| 作者 | LU DC |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 1993 |
| 卷号 | 129期号:0页码:629-634 |
| ISSN号 | 0022-0248 |
| 关键词 | THERMODYNAMIC ANALYSIS ZNSE PRESSURE SEMICONDUCTORS MOVPE OMVPE |
| 通讯作者 | lu dc chinese acad sciinst semicondsemicond mat sci labbeijing 100083peoples r china |
| 中文摘要 | although metalorganic vapor phase epitaxy (movpe) is generally regarded as a non-equillibrium process, it can be assumed that a chemical equilibrium is established at the vapor-solid interface in the diffusion limited region of growth rate. in this paper, an equilibrium model was proposed to calculate the relation between vapor and solid compositions for ii-vi ternary alloys. metastable alloys in the miscibility gap may not be obtained when the growth temperature is lower than the critical temperature of the system. the influence of growth temperature, reactor pressure, input vi/ii ratio, and input composition of group vi reactants has been calculated for znsse, znsete and znste. the results are compared with experimental data for the znsse and znste systems. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14101]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | LU DC. GROWTH OF WIDE-BAND GAP IMMISCIBLE II-VI ALLOYS BY METALORGANIC VAPOR-PHASE EPITAXY[J]. journal of crystal growth,1993,129(0):629-634. |
| APA | LU DC.(1993).GROWTH OF WIDE-BAND GAP IMMISCIBLE II-VI ALLOYS BY METALORGANIC VAPOR-PHASE EPITAXY.journal of crystal growth,129(0),629-634. |
| MLA | LU DC."GROWTH OF WIDE-BAND GAP IMMISCIBLE II-VI ALLOYS BY METALORGANIC VAPOR-PHASE EPITAXY".journal of crystal growth 129.0(1993):629-634. |
入库方式： OAI收割
来源：半导体研究所
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