FIELD-EFFECT ON THERMAL EMISSION FROM THE 0.40 EV ELECTRON LEVEL IN INGAP
文献类型：期刊论文
| 作者 | ZHU QS ; HIRAMATSU K ; SAWAKI N ; AKASAKI I ; LIU XN |
| 刊名 | journal of applied physics
 |
| 出版日期 | 1993 |
| 卷号 | 73期号:2页码:771-774 |
| 关键词 | LIQUID-PHASE EPITAXY 100 GAAS TRANSIENT SPECTROSCOPY OPTICAL-PROPERTIES SEMICONDUCTORS SILICON VACANCY DEFECTS TRAPS |
| ISSN号 | 0021-8979 |
| 通讯作者 | zhu qs acad sinicainst semicondbeijing 100083peoples r china |
| 中文摘要 | results are reported of electric-field dependence on thermal emission of electrons from the 0.40 ev level at various temperatures in ingap by means of deep-level transient spectroscopy. the data are analyzed according to the poole-frankel emission from the potentials which are assumed to be coulombic, square well, and gaussian, respectively. the emission mte from this level is strongly field dependent. it is found that the gaussian potential model is more reasonable to describe the phosphorus-vacancy-induced potential in ingap than the coulombic and square-well ones. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-11-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/14123]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | ZHU QS,HIRAMATSU K,SAWAKI N,et al. FIELD-EFFECT ON THERMAL EMISSION FROM THE 0.40 EV ELECTRON LEVEL IN INGAP[J]. journal of applied physics,1993,73(2):771-774. |
| APA | ZHU QS,HIRAMATSU K,SAWAKI N,AKASAKI I,&LIU XN.(1993).FIELD-EFFECT ON THERMAL EMISSION FROM THE 0.40 EV ELECTRON LEVEL IN INGAP.journal of applied physics,73(2),771-774. |
| MLA | ZHU QS,et al."FIELD-EFFECT ON THERMAL EMISSION FROM THE 0.40 EV ELECTRON LEVEL IN INGAP".journal of applied physics 73.2(1993):771-774. |
入库方式： OAI收割
来源：半导体研究所
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